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Results: 1-25/66
Authors:
VANELLE E
MESRINE M
GRANDJEAN N
DEPARIS C
MASSIES J
Citation: E. Vanelle et al., INTERFACE EFFECTS ON THE PHOTOLUMINESCENCE OF GAAS GAINP QUANTUM-WELLS/, JPN J A P 1, 37(1), 1998, pp. 15-22
Authors:
GRANDJEAN N
MASSIES J
LEROUX M
LORENZINI P
Citation: N. Grandjean et al., VIOLET INGAN GAN LIGHT-EMITTING-DIODES GROWN BY MOLECULAR-BEAM EPITAXY USING NH3/, JPN J A P 2, 37(8A), 1998, pp. 907-909
Authors:
DEMANGEOT F
FRANDON J
RENUCCI MA
GRANDJEAN N
BEAUMONT B
MASSIES J
GIBART P
Citation: F. Demangeot et al., COUPLED LONGITUDINAL OPTIC PHONON-PLASMON MODES IN P-TYPE GAN, Solid state communications, 106(8), 1998, pp. 491-494
Authors:
GRANDJEAN N
MASSIES J
VENNEGUES P
LEROUX M
DEMANGEOT F
RENUCCI M
FRANDON J
Citation: N. Grandjean et al., MOLECULAR-BEAM EPITAXY OF GALLIUM NITRIDE ON (0001)SAPPHIRE SUBSTRATES USING AMMONIA, Journal of applied physics, 83(3), 1998, pp. 1379-1383
Authors:
KUBALL M
DEMANGEOT F
FRANDON J
RENUCCI MA
MASSIES J
GRANDJEAN N
AULOMBARD RL
BRIOT O
Citation: M. Kuball et al., THERMAL-STABILITY OF GAN INVESTIGATED BY RAMAN-SCATTERING, Applied physics letters, 73(7), 1998, pp. 960-962
Authors:
GRANDJEAN N
MASSIES J
Citation: N. Grandjean et J. Massies, REAL-TIME CONTROL OF INXGA1-XN MOLECULAR-BEAM EPITAXY GROWTH, Applied physics letters, 72(9), 1998, pp. 1078-1080
Authors:
MESRINE M
GRANDJEAN N
MASSIES J
Citation: M. Mesrine et al., EFFICIENCY OF NH3 AS NITROGEN-SOURCE FOR GAN MOLECULAR-BEAM EPITAXY, Applied physics letters, 72(3), 1998, pp. 350-352
Authors:
GRANDJEAN N
MASSIES J
LEROUX M
DEMIERRY P
Citation: N. Grandjean et al., BAND-EDGE VERSUS DEEP LUMINESCENCE OF INXGA1-XN LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 72(24), 1998, pp. 3190-3192
Authors:
GRANDJEAN N
MASSIES J
LEROUX M
LORENZINI P
Citation: N. Grandjean et al., ULTRAVIOLET GAN LIGHT-EMITTING-DIODES GROWN BY MOLECULAR-BEAM EPITAXYUSING NH3, Applied physics letters, 72(1), 1998, pp. 82-84
Authors:
LEROUX M
BEAUMONT B
GRANDJEAN N
LORENZINI P
HAFFOUZ S
VENNEGUES P
MASSIES J
GIBART P
Citation: M. Leroux et al., LUMINESCENCE AND REFLECTIVITY STUDIES OF UNDOPED, N-DOPED AND P-DOPEDGAN ON (0001)SAPPHIRE, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 97-104
Authors:
DISSEIX P
LEYMARIE J
VASSON A
VASSON AM
MONIER C
GRANDJEAN N
LEROUX M
MASSIES J
Citation: P. Disseix et al., EFFECTS OF SEGREGATION ON THE OPTICAL-PROPERTIES OF (IN,GA)AS GAAS QUANTUM-WELLS GROWN BY MBE UNDER VARIOUS CONDITIONS/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 151-154
Authors:
LEROUX M
BEAUMONT B
GRANDJEAN N
GOLIVET C
GIBART P
MASSIES J
LEYMARIE J
VASSON A
VASSON AM
Citation: M. Leroux et al., COMPARATIVE OPTICAL CHARACTERIZATION OF GAN GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY, GAS-SOURCE MOLECULAR-BEAM EPITAXY AND HALIDE VAPOR-PHASE EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 237-241
Authors:
GROUSSON R
VOLIOTIS V
GRANDJEAN N
MASSIES J
LEROUX M
DEPARIS C
Citation: R. Grousson et al., MICROROUGHNESS AND EXCITON LOCALIZATION IN (AL,GA)AS GAAS QUANTUM-WELLS/, Physical review. B, Condensed matter, 55(8), 1997, pp. 5253-5258
Authors:
CHASTAINGT B
GURIOLI M
BORRI P
COLOCCI M
NEU G
DEPARIS C
MASSIES J
MARTINEZPASTOR J
Citation: B. Chastaingt et al., CONTROLLED TYPE-I-TYPE-II TRANSITION IN GAAS ALAS/ALXGA1-XAS DOUBLE-BARRIER QUANTUM-WELLS/, Physical review. B, Condensed matter, 55(4), 1997, pp. 2393-2400
Authors:
DISSEIX P
LEYMARIE J
VASSON A
VASSON AM
MONIER C
GRANDJEAN N
LEROUX M
MASSIES J
Citation: P. Disseix et al., OPTICAL STUDY OF SEGREGATION EFFECTS ON THE ELECTRONIC-PROPERTIES OF MOLECULAR-BEAM-EPITAXY GROWN (IN,GA)AS GAAS QUANTUM-WELLS/, Physical review. B, Condensed matter, 55(4), 1997, pp. 2406-2412
Authors:
JONNARD P
VERGAND F
BONNELLE C
LEROUX M
MASSIES J
Citation: P. Jonnard et al., AL 3P VALENCE AND EXCITONIC STATES IN GASB AL0.3GA0.7SB AND GAAS/AL0.3GA0.7AS HETEROSTRUCTURES AS A FUNCTION OF GROWTH-PROCESS/, Physical review. B, Condensed matter, 55(23), 1997, pp. 15727-15734
Authors:
GRANDJEAN N
MASSIES J
TOTTEREAU O
Citation: N. Grandjean et al., SURFACE SEGREGATION IN (GA,IN)AS GAAS QUANTUM BOXES/, Physical review. B, Condensed matter, 55(16), 1997, pp. 10189-10192
Authors:
LEROUX M
MASSIES J
Citation: M. Leroux et J. Massies, LUMINESCENCE REABSORPTION IN AN INHOMOGENEOUSLY RADIATIVE MEDIUM - THE CASE OF (AL,GA)SB QUANTUM-WELLS AROUND THE GAMMA-L CROSSOVER, Journal of luminescence, 72-4, 1997, pp. 355-357
Authors:
GRANDJEAN N
MASSIES J
MARTINEZ Y
VENNEGUES P
LEROUX M
LAUGT M
Citation: N. Grandjean et al., GAN EPITAXIAL-GROWTH ON SAPPHIRE(0001) - THE ROLE OF THE SUBSTRATE NITRIDATION, Journal of crystal growth, 178(3), 1997, pp. 220-228
Authors:
MESRINE M
MASSIES J
DEPARIS C
GRANDJEAN N
VANELLE E
LEROUX M
Citation: M. Mesrine et al., INDIUM SURFACE SEGREGATION DURING CHEMICAL BEAM EPITAXY OF GA1-XINXASGAAS AND GA1-XINXP/GAAS HETEROSTRUCTURES/, Journal of crystal growth, 175, 1997, pp. 1242-1246
Authors:
GARCIA JC
LEBKIRI A
FILY A
COLLOT P
MASSIES J
LEROUX M
Citation: Jc. Garcia et al., CHEMICAL BEAM EPITAXY GROWTH OF TENSILE-STRAINED GAASP GAALAS QUANTUM-WELL HETEROSTRUCTURES FOR LASER APPLICATION/, Journal of crystal growth, 175, 1997, pp. 1265-1269
Authors:
LOPEZ C
MAYORAL R
MESEGUER F
PORTO JA
SANCHEZDEHESA J
LEROUX M
GRANDJEAN N
DEPARIS C
MASSIES J
Citation: C. Lopez et al., OPTICAL STUDIES OF HIGHLY STRAINED INGAAS GAAS QUANTUM-WELLS GROWN ONVICINAL SURFACES/, Journal of applied physics, 81(7), 1997, pp. 3281-3289
Authors:
GRANDJEAN N
MASSIES J
LORENZINI P
LEROUX M
Citation: N. Grandjean et al., GAN BASED LEDS GROWN BY MOLECULAR-BEAM EPITAXY, Electronics Letters, 33(25), 1997, pp. 2156-2157
Authors:
MESRINE M
MASSIES J
VANELLE E
GRANDJEAN N
DEPARIS C
Citation: M. Mesrine et al., PHOTOLUMINESCENCE ENERGY AND INTERFACE CHEMISTRY OF GAINP GAAS QUANTUM-WELLS/, Applied physics letters, 71(24), 1997, pp. 3552-3554
Authors:
GRANDJEAN N
LEROUX M
LAUGT M
MASSIES J
Citation: N. Grandjean et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY OF WURTZITE GAN ON SAPPHIRE SUBSTRATES USING GAN BUFFER LAYERS, Applied physics letters, 71(2), 1997, pp. 240-242