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Results: 1-17 |
Results: 17
COUNTER-DOPED SURFACE CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH HIGH-CURRENT DRIVABILITY AND STEEP SUBTHRESHOLD SLOPE
Authors: KOIKE H ENDA T MATSUOKA F SHIGYO N
Citation: H. Koike et al., COUNTER-DOPED SURFACE CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH HIGH-CURRENT DRIVABILITY AND STEEP SUBTHRESHOLD SLOPE, JPN J A P 1, 37(10), 1998, pp. 5503-5506
OBSERVATION OF PANCAKE-LIKE VORTEX IN THE ANGULAR-DEPENDENCE OF THE MAGNETIZATION AROUND H-PARALLEL-TO-A-AXIS IN ND1.858CE0.142CUO4 SINGLE-CRYSTAL
Authors: IWASAKI H MATSUMOTO T YUKIMACHI F TANIGAWA K MATSUOKA F
Citation: H. Iwasaki et al., OBSERVATION OF PANCAKE-LIKE VORTEX IN THE ANGULAR-DEPENDENCE OF THE MAGNETIZATION AROUND H-PARALLEL-TO-A-AXIS IN ND1.858CE0.142CUO4 SINGLE-CRYSTAL, Physica. C, Superconductivity, 305(1-2), 1998, pp. 11-20
QUICK-TURNAROUND-TIME IMPROVEMENT FOR PRODUCT DEVELOPMENT AND TRANSFER TO MASS-PRODUCTION
Authors: KOIKE H MATSUOKA F HOHKIBARA S FUKUDA E TOMIOKA K MIYAJIMA H MURAOKA K HAYASAKA N KIMURA M
Citation: H. Koike et al., QUICK-TURNAROUND-TIME IMPROVEMENT FOR PRODUCT DEVELOPMENT AND TRANSFER TO MASS-PRODUCTION, IEEE transactions on semiconductor manufacturing, 11(1), 1998, pp. 54-62
INFLUENCE OF DEFECTS ON ELECTRON-EMISSION FROM DIAMOND FILMS
Authors: SHOW Y MATSUOKA F HAYASHI M ITO H IWASE M IZUMI T
Citation: Y. Show et al., INFLUENCE OF DEFECTS ON ELECTRON-EMISSION FROM DIAMOND FILMS, Journal of applied physics, 84(11), 1998, pp. 6351-6354
PARAMAGNETIC DEFECTS PRODUCED IN N AND B ION-IMPLANTED CVD DIAMOND FILMS
Authors: HAYASHI M SEKINE D MATSUOKA F SHOW Y IZUMI T DEGUCHI M KITABATAKE M KITAGAWA M HIRAO T
Citation: M. Hayashi et al., PARAMAGNETIC DEFECTS PRODUCED IN N AND B ION-IMPLANTED CVD DIAMOND FILMS, Diamond films and technology, 7(5-6), 1997, pp. 298-301
DEPENDENCE OF BORON AND METHANE CONCENTRATIONS ON DEFECTS IN CVD DIAMOND FILM (ESR STUDY)
Authors: MATSUOKA F ITO H SHOW Y IWASE M IZUMI T
Citation: F. Matsuoka et al., DEPENDENCE OF BORON AND METHANE CONCENTRATIONS ON DEFECTS IN CVD DIAMOND FILM (ESR STUDY), Diamond films and technology, 7(5-6), 1997, pp. 302-305
TIME-DEPENDENCE OF ELECTRICAL-RESISTANCE AND ESR DEFECTS IN SURFACE CONDUCTIVE LAYER ON DIAMOND FILMS
Authors: GI RS SHOW Y MATSUOKA F IZUMI T AKIBA Y KUROSU T IIDA M
Citation: Rs. Gi et al., TIME-DEPENDENCE OF ELECTRICAL-RESISTANCE AND ESR DEFECTS IN SURFACE CONDUCTIVE LAYER ON DIAMOND FILMS, Diamond films and technology, 7(5-6), 1997, pp. 306-308
ESR CHARACTERIZATION OF DEFECTS PRODUCED IN DIAMOND SURFACE BY B-ION-IMPLANTATION
Authors: SHOW Y MATSUOKA F IZUMI T DEGUCHI M KITABATAKE M SAKAKIMA H HIRAO T MORI Y HATTA A ITO T HIRAKI A
Citation: Y. Show et al., ESR CHARACTERIZATION OF DEFECTS PRODUCED IN DIAMOND SURFACE BY B-ION-IMPLANTATION, Applied surface science, 117, 1997, pp. 574-577
DUAL-POLYCIDE GATE TECHNOLOGY USING REGROWTH AMORPHOUS-SI TO SUPPRESSLATERAL DOPANT DIFFUSION
Authors: KOIKE H UNNO Y MATSUOKA F KAKUMU M
Citation: H. Koike et al., DUAL-POLYCIDE GATE TECHNOLOGY USING REGROWTH AMORPHOUS-SI TO SUPPRESSLATERAL DOPANT DIFFUSION, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1460-1466
REDUCTIVE CYCLIZATION OF GAMMA,DELTA-UNSATURATED SELENOTHIOIC ACID S-ESTERS LEADING TO TETRAHYDROSELENOPHENES
Authors: MURAI T MAEDA M MATSUOKA F KANDA T KATO S
Citation: T. Murai et al., REDUCTIVE CYCLIZATION OF GAMMA,DELTA-UNSATURATED SELENOTHIOIC ACID S-ESTERS LEADING TO TETRAHYDROSELENOPHENES, Chemical communications, (12), 1996, pp. 1461-1462
SIMPLE AND QUICK TURNAROUND TIME FABRICATION PROCESS FOR DEEP-SUBMICROMETER CMOS GENERATION
Authors: KOIKE H MATSUOKA F OHTSUKA H KAKUMU M
Citation: H. Koike et al., SIMPLE AND QUICK TURNAROUND TIME FABRICATION PROCESS FOR DEEP-SUBMICROMETER CMOS GENERATION, IEEE transactions on semiconductor manufacturing, 9(4), 1996, pp. 489-494
LOW-RESISTIVITY POLY-METAL GATE ELECTRODE DURABLE FOR HIGH-TEMPERATURE PROCESSING
Authors: AKASAKA Y SUEHIRO S NAKAJIMA K NAKASUGI T MIYANO K KASAI K OYAMATSU H KINUGAWA M TAKAGI MT AGAWA K MATSUOKA F KAKUMU M SUGURO K
Citation: Y. Akasaka et al., LOW-RESISTIVITY POLY-METAL GATE ELECTRODE DURABLE FOR HIGH-TEMPERATURE PROCESSING, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1864-1869
VORTEX-LATTICE MELTING TRANSITION IN LA1.85SR0.15CUO4 SINGLE-CRYSTAL
Authors: NAITO T NISHIZAKI T MATSUOKA F IWASAKI H KOBAYASHI N
Citation: T. Naito et al., VORTEX-LATTICE MELTING TRANSITION IN LA1.85SR0.15CUO4 SINGLE-CRYSTAL, Czechoslovak journal of Physics, 46, 1996, pp. 1585-1586
A SEPARATION OF THE PT 5D ORBITAL AND SPIN MOMENTS IN A FERRIMAGNETICCRPT3 COMPOUND
Authors: MARUYAMA H MATSUOKA F KOBAYASHI K YAMAZAKI H
Citation: H. Maruyama et al., A SEPARATION OF THE PT 5D ORBITAL AND SPIN MOMENTS IN A FERRIMAGNETICCRPT3 COMPOUND, Physica. B, Condensed matter, 209(1-4), 1995, pp. 787-788
5D ELECTRONIC STATES IN PT ALLOYS PROBED BY MAGNETIC CIRCULAR X-RAY DICHROISM
Authors: MARUYAMA H MATSUOKA F KOBAYASHI K YAMAZAKI H
Citation: H. Maruyama et al., 5D ELECTRONIC STATES IN PT ALLOYS PROBED BY MAGNETIC CIRCULAR X-RAY DICHROISM, Journal of magnetism and magnetic materials, 144, 1995, pp. 43-44
HIGH-DENSITY FULL-CMOS SRAM CELL TECHNOLOGY WITH A DEEP-SUBMICRON SPACING BETWEEN NMOS AND PMOSFET
Authors: MATSUOKA F ISHIMARU K GOJOHBORI H KOIKE H UNNO Y SAI M KONDO T ICHIKAWA R KAKUMU M
Citation: F. Matsuoka et al., HIGH-DENSITY FULL-CMOS SRAM CELL TECHNOLOGY WITH A DEEP-SUBMICRON SPACING BETWEEN NMOS AND PMOSFET, IEICE transactions on electronics, E77C(8), 1994, pp. 1385-1394
DRAIN STRUCTURE OPTIMIZATION FOR HIGHLY RELIABLE DEEP-SUBMICROMETER N-CHANNEL MOSFET
Authors: MATSUOKA F KASAI K OYAMATSU H KINUGAWA M MAEGUCHI K
Citation: F. Matsuoka et al., DRAIN STRUCTURE OPTIMIZATION FOR HIGHLY RELIABLE DEEP-SUBMICROMETER N-CHANNEL MOSFET, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 420-426
Risultati: 1-17 |