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Results: 1-7 |
Results: 7
THE INCLUSION OF A FINITE CAPTURE TIME IN THE NUMERICAL-SIMULATION OFQUANTUM EFFECT DEVICES
Authors: GAULT M MATSUURA H FURUYA K MAWBY P TOWERS MS
Citation: M. Gault et al., THE INCLUSION OF A FINITE CAPTURE TIME IN THE NUMERICAL-SIMULATION OFQUANTUM EFFECT DEVICES, Solid-state electronics, 38(1), 1995, pp. 9-15
THE INCLUSION OF A FINITE CAPTURE TIME IN NUMERICAL DEVICE SIMULATION
Authors: GAULT M MATSUURA H FURUYA K MAWBY P TOWERS MS
Citation: M. Gault et al., THE INCLUSION OF A FINITE CAPTURE TIME IN NUMERICAL DEVICE SIMULATION, Compel, 13(4), 1994, pp. 703-716
NUMERICAL MODELING OF A NOVEL TWIN-RIDGE WAVE-GUIDE OPTICAL AMPLIFIER
Authors: SABESAN L RAY AK MAWBY P TOWERS M
Citation: L. Sabesan et al., NUMERICAL MODELING OF A NOVEL TWIN-RIDGE WAVE-GUIDE OPTICAL AMPLIFIER, Compel, 13(4), 1994, pp. 879-892
COHERENT PROPERTIES OF ELECTRON-EMISSION FROM A SINGLE HETEROBARRIER
Authors: GAULT M MATSUURA H FURUYA K MAWBY P
Citation: M. Gault et al., COHERENT PROPERTIES OF ELECTRON-EMISSION FROM A SINGLE HETEROBARRIER, Journal of applied physics, 76(1), 1994, pp. 395-402
2-DIMENSIONAL SIMULATION OF CONSTRICTED-MESA INGAASP INP BURIED-HETEROSTRUCTURE LASERS/
Authors: GAULT M MAWBY P ADAMS AR TOWERS M
Citation: M. Gault et al., 2-DIMENSIONAL SIMULATION OF CONSTRICTED-MESA INGAASP INP BURIED-HETEROSTRUCTURE LASERS/, IEEE journal of quantum electronics, 30(8), 1994, pp. 1691-1700
ELECTRICAL CHARACTERIZATION OF A HETEROJUNCTION FIELD-EFFECT TRANSISTOR PHOTODETECTOR (HFETPD)
Authors: THOMPSON D MCCOWEN A MAWBY P
Citation: D. Thompson et al., ELECTRICAL CHARACTERIZATION OF A HETEROJUNCTION FIELD-EFFECT TRANSISTOR PHOTODETECTOR (HFETPD), Solid-state electronics, 36(9), 1993, pp. 1295-1302
THE TEMPERATURE CHARACTERISTICS OF INGAASP INP BURIED HETEROSTRUCTURELASERS/
Authors: GAULT M MAWBY P ADAMS AR TOWERS M
Citation: M. Gault et al., THE TEMPERATURE CHARACTERISTICS OF INGAASP INP BURIED HETEROSTRUCTURELASERS/, Journal of applied physics, 74(12), 1993, pp. 7621-7623
Risultati: 1-7 |