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Results:
1-12
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Results: 12
Authors:
MCCORD MA
DANA A
PEASE RFW
Citation: Ma. Mccord et al., THE MICROMECHANICAL TUNNELING TRANSISTOR, Journal of micromechanics and microengineering, 8(3), 1998, pp. 209-212
Authors:
MCCORD MA
Citation: Ma. Mccord, ELECTRON-BEAM LITHOGRAPHY FOR 0.13 MU-M MANUFACTURING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2125-2129
Authors:
GHAZANFARIAN AA
PEASE RFW
CHEN X
MCCORD MA
Citation: Aa. Ghazanfarian et al., NEURAL-NETWORK MODEL FOR GLOBAL ALIGNMENT INCORPORATING WAFER AND STAGE DISTORTION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2146-2150
Authors:
HAN LQ
WANG WD
MCCORD MA
BERGLUND CN
PEASE RFW
WEAVER LS
Citation: Lq. Han et al., PRACTICAL APPROACH TO SEPARATING THE PATTERN GENERATOR-INDUCED MASK CD ERRORS FROM THE BLANK PROCESS-INDUCE MASK CD ERRORS USING CONVENTIONAL MARKET MEASUREMENTS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2243-2248
Authors:
WINOGRAD GI
PEASE RFW
MCCORD MA
Citation: Gi. Winograd et al., BLANKED APERTURE ARRAY FOR PARALLEL ELECTRON-BEAM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2289-2292
Authors:
BAUM AW
SCHNEIDER JE
PEASE RFW
MCCORD MA
SPICER WE
COSTELLO KA
AEBI VW
Citation: Aw. Baum et al., SEMICONDUCTOR ON GLASS PHOTOCATHODES FOR HIGH-THROUGHPUT MASKLESS ELECTRON-BEAM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2707-2712
Authors:
FUKUDA H
HOYT JL
MCCORD MA
PEASE RFW
Citation: H. Fukuda et al., FABRICATION OF SILICON NANOPILLARS CONTAINING POLYCRYSTALLINE SILICONINSULATOR MULTILAYER STRUCTURES/, Applied physics letters, 70(3), 1997, pp. 333-335
Authors:
GESLEY MA
MCCORD MA
Citation: Ma. Gesley et Ma. Mccord, 100 KV GHOST ELECTRON-BEAM PROXIMITY CORRECTION ON TUNGSTEN X-RAY MASKS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3478-3482
Authors:
HECTOR SD
WONG VV
SMITH HI
MCCORD MA
RHEE KW
Citation: Sd. Hector et al., PRINTABILITY OF SUB-150 NM FEATURES IN X-RAY-LITHOGRAPHY - THEORY ANDEXPERIMENTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3965-3969
Authors:
RISK WP
LAU SD
MCCORD MA
Citation: Wp. Risk et al., 3RD-ORDER GUIDED-WAVE DISTRIBUTED BRAGG REFLECTORS FABRICATED BY ION-EXCHANGE IN KTIOPO4, IEEE photonics technology letters, 6(3), 1994, pp. 406-408
Authors:
MCCORD MA
WAGNER A
SEEGER D
Citation: Ma. Mccord et al., EFFECT OF MASK ABSORBER THICKNESS ON X-RAY-EXPOSURE LATITUDE AND RESOLUTION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2881-2887
Authors:
MCCORD MA
WAGNER A
DONOHUE T
Citation: Ma. Mccord et al., RESOLUTION LIMITS AND PROCESS LATITUDE OF X-RAY MASK FABRICATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2958-2963
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1-12
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