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Results: 1-9 |
Results: 9
INVESTIGATION OF THE STRUCTURAL-PROPERTIES OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES
Authors: GALIEV GB IMAMOV RM MEDVEDEV BK MOKEROV VG MUKHAMEDZHANOV EK PASHAEV EM CHEGLAKOV VB
Citation: Gb. Galiev et al., INVESTIGATION OF THE STRUCTURAL-PROPERTIES OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES, Semiconductors, 31(10), 1997, pp. 1003-1005
COMPUTER-MODEL OF GROWTH OF AN A(III)B(III)C(V) A(III)C(V) HETEROJUNCTION WITH A LATERALLY INHOMOGENEOUS DISTRIBUTION OF CONSTITUENT-A AND CONSTITUENT-B DURING MOLECULAR-BEAM EPITAXY/
Authors: PESKOV NV MEDVEDEV BK
Citation: Nv. Peskov et Bk. Medvedev, COMPUTER-MODEL OF GROWTH OF AN A(III)B(III)C(V) A(III)C(V) HETEROJUNCTION WITH A LATERALLY INHOMOGENEOUS DISTRIBUTION OF CONSTITUENT-A AND CONSTITUENT-B DURING MOLECULAR-BEAM EPITAXY/, Semiconductors, 30(9), 1996, pp. 886-890
RATE-EQUATIONS FOR LAYER-BY-LAYER EPITAXI AL-GROWTH
Authors: TROFIMOV VI MEDVEDEV BK MOKEROV VG SHUMYANKOV AG
Citation: Vi. Trofimov et al., RATE-EQUATIONS FOR LAYER-BY-LAYER EPITAXI AL-GROWTH, Doklady Akademii nauk. Rossijskaa akademia nauk, 347(4), 1996, pp. 469-471
U- CENTERS IN SELECTIVELY DOPED HETEROSTRUCTURES
Authors: DMITRIEV SG MEDVEDEV BK MOKEROV VG SHAGIMURATOV OG
Citation: Sg. Dmitriev et al., U- CENTERS IN SELECTIVELY DOPED HETEROSTRUCTURES, Semiconductors, 29(3), 1995, pp. 259-262
EXTENDED MODEL OF THE MOLECULAR-BEAM EPIT AXIAL-GROWTH KINETICS ON VICINAL SURFACE
Authors: TROFIMOV VI MEDVEDEV BK MOKEROV VG SHUMYANKOV AG
Citation: Vi. Trofimov et al., EXTENDED MODEL OF THE MOLECULAR-BEAM EPIT AXIAL-GROWTH KINETICS ON VICINAL SURFACE, Doklady Akademii nauk. Rossijskaa akademia nauk, 344(1), 1995, pp. 40-42
LOW-VOLTAGE CURRENT INSTABILITIES IN LONG ALGAAS GAAS SAMPLES SUBJECTED TO PULSED AND MICROWAVE FIELDS/
Authors: BORISOV VI DMITRIEV SG LYUBCHENKO VE MEDVEDEV BK MOKEROV VG SPIRIDONOV KI
Citation: Vi. Borisov et al., LOW-VOLTAGE CURRENT INSTABILITIES IN LONG ALGAAS GAAS SAMPLES SUBJECTED TO PULSED AND MICROWAVE FIELDS/, Semiconductors, 28(7), 1994, pp. 683-686
DISTRIBUTION OF ADMIXTURE ATOMS DURING DE LTA-ALLOYING DUE TO MOLECULAR-BEAM EPITAXY
Authors: MEDVEDEV BK MOKEROV VG PESKOV NV
Citation: Bk. Medvedev et al., DISTRIBUTION OF ADMIXTURE ATOMS DURING DE LTA-ALLOYING DUE TO MOLECULAR-BEAM EPITAXY, Pis'ma v Zurnal tehniceskoj fiziki, 20(20), 1994, pp. 28-31
MICROWAVE IV CHARACTERISTICS AND HIGH-FRE QUENCY CURRENT INSTABILITIES IN SELECTIVELY DOPED HETEROSTRUCTURES ALGAAS GAAS/
Authors: BORISOV VI DMITRIEV SG LYUBCHENKO VE MEDVEDEV BK MOKEROV VG ROGASHKOV SA SPIRIDONOV KI
Citation: Vi. Borisov et al., MICROWAVE IV CHARACTERISTICS AND HIGH-FRE QUENCY CURRENT INSTABILITIES IN SELECTIVELY DOPED HETEROSTRUCTURES ALGAAS GAAS/, RADIOTEK EL, 39(2), 1994, pp. 321-327
KINETICS OF BULK VACANCIES CREATION IN MBE GROWTH OF GAAS
Authors: MEDVEDEV BK MOKEROV VG PESKOV NV
Citation: Bk. Medvedev et al., KINETICS OF BULK VACANCIES CREATION IN MBE GROWTH OF GAAS, Doklady Akademii nauk. Rossijskaa akademia nauk, 329(3), 1993, pp. 302-305
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