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Results: 1-8 |
Results: 8
LUMINESCENCE PROPERTIES OF GALLIUM NITRIDE LAYERS GROWN ON SILICON-CARBIDE SUBSTRATES BY GAS-PHASE EPITAXY IN A CHLORIDE SYSTEM
Authors: ZUBRILOV AS MELNIK YV TSVETKOV DV BUGROV VE NIKOLAEV AE STEPANOV SI DMITRIEV VA
Citation: As. Zubrilov et al., LUMINESCENCE PROPERTIES OF GALLIUM NITRIDE LAYERS GROWN ON SILICON-CARBIDE SUBSTRATES BY GAS-PHASE EPITAXY IN A CHLORIDE SYSTEM, Semiconductors, 31(5), 1997, pp. 523-526
RESIDUAL STRAINS IN GAN GROWN ON 6H-SIC
Authors: NIKITINA IP SHEGLOV MP MELNIK YV IRVINE KG DMITRIEV VA
Citation: Ip. Nikitina et al., RESIDUAL STRAINS IN GAN GROWN ON 6H-SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1524-1527
STRUCTURAL-PROPERTIES OF GAN GROWN ON SIC SUBSTRATES BY HYDRIDE VAPOR-PHASE EPITAXY
Authors: MELNIK YV NIKITINA IP NIKOLAEV AE DMITRIEV VA
Citation: Yv. Melnik et al., STRUCTURAL-PROPERTIES OF GAN GROWN ON SIC SUBSTRATES BY HYDRIDE VAPOR-PHASE EPITAXY, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1532-1535
ELECTRICAL CHARACTERISTICS OF GAN 6H-SIC N-P HETEROJUNCTIONS/
Authors: KUZNETSOV NI GUBENCO AE NIKOLAEV AE MELNIK YV BLASHENKOV MN NIKITINA IP DMITRIEV VA
Citation: Ni. Kuznetsov et al., ELECTRICAL CHARACTERISTICS OF GAN 6H-SIC N-P HETEROJUNCTIONS/, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 74-78
EFFECTS OF SUBSTRATE TYPE ON THE CHARACTERISTICS OF GAN EPITAXIAL-FILMS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: CHENG TS FOXON CT REN GB ORTON JW MELNIK YV NIKITINA IP NIKOLAEV AE NOVIKOV SV DMITRIEV VA
Citation: Ts. Cheng et al., EFFECTS OF SUBSTRATE TYPE ON THE CHARACTERISTICS OF GAN EPITAXIAL-FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 12(7), 1997, pp. 917-920
OPTICAL STUDIES OF EXCITON SPECTRA IN GAN EPETAXIAL FILMS
Authors: NELSON DK MELNIK YV SELKIN AV YAKOBSON MA DMITRIEV VA IRVIN KZ KARTER KK
Citation: Dk. Nelson et al., OPTICAL STUDIES OF EXCITON SPECTRA IN GAN EPETAXIAL FILMS, Fizika tverdogo tela, 38(3), 1996, pp. 822-826
SOME NEW FUNDAMENTAL PROPERTIES OF GAN SINGLE-CRYSTAL FILMS ON SIC AND SAPPHIRE SUBSTRATES
Authors: JACOBSON MA NELSON DK MELNIK YV SELKIN AV
Citation: Ma. Jacobson et al., SOME NEW FUNDAMENTAL PROPERTIES OF GAN SINGLE-CRYSTAL FILMS ON SIC AND SAPPHIRE SUBSTRATES, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(11-12), 1995, pp. 1509-1512
ACTIVATION-ENERGY OF ALUMINUM NITRIDE DEPOSITION FROM A CHLORIDE HYDRIDE SYSTEM
Authors: LEBEDEV AO MELNIK YV TSAREGORODTSEV AM
Citation: Ao. Lebedev et al., ACTIVATION-ENERGY OF ALUMINUM NITRIDE DEPOSITION FROM A CHLORIDE HYDRIDE SYSTEM, Russian journal of applied chemistry, 67(1), 1994, pp. 134-137
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