Authors: MENSZ PM KELLAWON P VANROIJEN R KOZODOY P DENBAARS S

Citation: Pm. Mensz et al., INXGA1-XN ALYGA1-YN VIOLET LIGHT-EMITTING-DIODES WITH REFLECTIVE P-CONTACTS FOR HIGH SINGLE-SIDED LIGHT EXTRACTION/, Electronics Letters, 33(24), 1997, pp. 2066-2068

Authors: TEISSEYRE H KOZANKIEWICZ B LESZCZYNSKI M GRZEGORY I SUSKI T BOCKOWSKI M POROWSKI S PAKULA K MENSZ PM BHAT IB

Citation: H. Teisseyre et al., PRESSURE AND TIME-RESOLVED PHOTOLUMINESCENCE STUDIES OF MG-DOPED AND UNDOPED GAN, Physica status solidi. b, Basic research, 198(1), 1996, pp. 235-241

Authors: MENSZ PM

Citation: Pm. Mensz, ELECTRICAL AND OPTICAL MODELING OF II-VI SEMICONDUCTOR DIODE-LASERS, Journal of crystal growth, 138(1-4), 1994, pp. 697-702

Authors: MENSZ PM

Citation: Pm. Mensz, PROSPECTS FOR TRULY BLUE ZNSE ZN1-UMGUSVSE1-V/ZN1-XMGXSYSE1-Y SEMICONDUCTOR DIODE-LASERS/, Applied physics letters, 65(21), 1994, pp. 2627-2629

Authors: MENSZ PM

Citation: Pm. Mensz, BETE ZNSE GRADED BAND-GAP OHMIC CONTACTS TO P-ZNSE, Applied physics letters, 64(16), 1994, pp. 2148-2150

Authors: MENSZ PM HERKO S HABERERN KW GAINES J PONZONI C

Citation: Pm. Mensz et al., ELECTRICAL CHARACTERIZATION OF P-TYPE ZNSE-N AND ZN1-XMGXSYSE1-Y-N THIN-FILMS, Applied physics letters, 63(20), 1993, pp. 2800-2802