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Results: 1-8 |
Results: 8
ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF A PD-P(0)-SI-P-SI STRUCTURE WITH A DISORDERED INTERMEDIATE P(0) LAYER
Authors: SLOBODCHIKOV SV SALIKHOV KM RUSSU EV MEREDOV MM YAZLYEVA AI
Citation: Sv. Slobodchikov et al., ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF A PD-P(0)-SI-P-SI STRUCTURE WITH A DISORDERED INTERMEDIATE P(0) LAYER, Semiconductors, 31(1), 1997, pp. 11-14
ELECTRIC AND PHOTOELECTRIC CHARACTERISTICS OF A HYBRID ISOTYPIC P-INP-P-INGAAS HETEROSTRUCTURE WITH A PD-P-INP SCHOTTKY-BARRIER
Authors: SLOBODCHIKOV SV RUSSU EV SALIKHOV KM MEREDOV MM YAZLYEVA AI
Citation: Sv. Slobodchikov et al., ELECTRIC AND PHOTOELECTRIC CHARACTERISTICS OF A HYBRID ISOTYPIC P-INP-P-INGAAS HETEROSTRUCTURE WITH A PD-P-INP SCHOTTKY-BARRIER, Semiconductors, 30(8), 1996, pp. 725-729
MECHANISM OF CURRENT TRANSPORT AND PHOTOELECTRIC CHARACTERISTICS OF PD-SIN-P-SI STRUCTURES
Authors: SLOBODCHIKOV SV RUSSU EV SALIKHOV KM MEREDOV MM YAZLYEVA AI
Citation: Sv. Slobodchikov et al., MECHANISM OF CURRENT TRANSPORT AND PHOTOELECTRIC CHARACTERISTICS OF PD-SIN-P-SI STRUCTURES, Semiconductors, 30(4), 1996, pp. 370-372
ELECTRICAL-PROPERTIES OF METAL-SEMICONDUCTOR DIODE STRUCTURES BASED ON DISORDERED GAP LAYERS
Authors: SLOBODCHIKOV SV RUSSU EV SALIKHOV KM MEREDOV MM YAZLYEVA AI
Citation: Sv. Slobodchikov et al., ELECTRICAL-PROPERTIES OF METAL-SEMICONDUCTOR DIODE STRUCTURES BASED ON DISORDERED GAP LAYERS, Semiconductors, 30(2), 1996, pp. 123-126
CURRENT TRANSPORT IN PD-SIO2-N(P)-SI MIS STRUCTURES AND A 2ND MECHANISM FOR PHOTOCURRENT AMPLIFICATION
Authors: SLOBODCHIKOV SV RUSSU EB SALIKHOV KM MEREDOV MM YAZLYEVA AI
Citation: Sv. Slobodchikov et al., CURRENT TRANSPORT IN PD-SIO2-N(P)-SI MIS STRUCTURES AND A 2ND MECHANISM FOR PHOTOCURRENT AMPLIFICATION, Semiconductors, 29(8), 1995, pp. 791-794
P-INP-P-INGAAS HYBRID ISOTOPIC HETEROSTRU CTURE WITH SCHOTTKY DIODES AS THE DETECTOR OF NEAR IR EMISSION AND HYDROGEN
Authors: SLOBODCHIKOV SV RUSSU EV SALIKHOV KM MEREDOV MM YAZLYEVA AI
Citation: Sv. Slobodchikov et al., P-INP-P-INGAAS HYBRID ISOTOPIC HETEROSTRU CTURE WITH SCHOTTKY DIODES AS THE DETECTOR OF NEAR IR EMISSION AND HYDROGEN, Pis'ma v Zurnal tehniceskoj fiziki, 21(19), 1995, pp. 50-54
PD-P-GAP DIODE STRUCTURES - ELECTRICAL AND PHOTOELECTRIC CHARACTERISTICS AND EFFECT OF HYDROGEN ON THEM
Authors: SLOBODCHIKOV SV KOVALEVSKAYA GG MEREDOV MM RUSSU EV SALIKHOV KM
Citation: Sv. Slobodchikov et al., PD-P-GAP DIODE STRUCTURES - ELECTRICAL AND PHOTOELECTRIC CHARACTERISTICS AND EFFECT OF HYDROGEN ON THEM, Semiconductors, 28(7), 1994, pp. 659-661
SI MDS PHOTODETECTOR AS THE HYDROGEN DETE CTOR
Authors: KOVALEVSKAYA GG MEREDOV MM RUSSU EV SALIKHOV KM SLOBODCHIKOV SV
Citation: Gg. Kovalevskaya et al., SI MDS PHOTODETECTOR AS THE HYDROGEN DETE CTOR, Zurnal tehniceskoj fiziki, 63(2), 1993, pp. 185-190
Risultati: 1-8 |