Authors: MERRITT SA HEIM PJS CHO SH DAGENAIS M

Citation: Sa. Merritt et al., CONTROLLED SOLDER INTERDIFFUSION FOR HIGH-POWER SEMICONDUCTOR-LASER DIODE DIE BONDING, IEEE transactions on components, packaging, and manufacturing technology. Part B, Advanced packaging, 20(2), 1997, pp. 141-145

Authors: PORKOLAB GA CHEN YJ MERRITT SA TABATABAEI SA AGARWALA S JOHNSON FG KING O DAGENAIS M WILSON RA STONE DR

Citation: Ga. Porkolab et al., WET-CHEMISTRY SURFACE-TREATMENT FOR DARK-CURRENT REDUCTION THAT PRESERVES LATERAL DIMENSIONS OF REACTIVE ION ETCHED GA0.47IN0.53AS P-I-N-DIODE PHOTODETECTORS, IEEE photonics technology letters, 9(4), 1997, pp. 490-492

Authors: SEIFERTH F JOHNSON FG MERRITT SA FOX S WHALEY RD CHEN YJ DAGENAIS M STONE DR

Citation: F. Seiferth et al., POLARIZATION-INSENSITIVE 1.55-MU-M OPTICAL AMPLIFIER WITH GAAS DELTA-STRAINED GA0.47IN0.53AS QUANTUM-WELLS, IEEE photonics technology letters, 9(10), 1997, pp. 1340-1342

Authors: VUSIRIKALA V GOPALAN BP KAREENAHALLI S MERRITT SA DAGENAIS M WOOD CEC STONE D

Citation: V. Vusirikala et al., GAAS-ALGAAS QW DILUTED WAVE-GUIDE LASER WITH LOW-LOSS, ALIGNMENT-TOLERANT COUPLING TO A SINGLE-MODE FIBER, IEEE photonics technology letters, 8(9), 1996, pp. 1130-1132

Authors: MERRITT SA DAUGA C FOX S WU IF DAGENAIS M

Citation: Sa. Merritt et al., MEASUREMENT OF THE FACET MODAL REFLECTIVITY SPECTRUM IN HIGH-QUALITY SEMICONDUCTOR TRAVELING-WAVE AMPLIFIERS, Journal of lightwave technology, 13(3), 1995, pp. 430-433

Authors: MERRITT SA DAGENAIS M

Citation: Sa. Merritt et M. Dagenais, ETCH CHARACTERISTICS OF SUCCINIC ACID AMMONIA HYDROGEN-PEROXIDE VERSUS ALUMINUM MOLE FRACTION IN ALGAAS, Journal of the Electrochemical Society, 140(9), 1993, pp. 120000138-120000139