Authors:
SIVOTHTHAMAN S
DESCHEPPER P
LAUREYS W
NIJS JF
MERTENS RP
Citation: S. Sivoththaman et al., IMPROVING LOW-TEMPERATURE APCVD SIO2 PASSIVATION BY RAPID THERMAL ANNEALING FOR SI DEVICES, IEEE electron device letters, 19(12), 1998, pp. 505-507
Citation: My. Ghannam et al., REFINED MODELING OF OPTICAL CONFINEMENT IN THIN SILICON LAYERS WITH ALAMBERTIAN BACK REFLECTOR FOR SOLAR-CELL APPLICATIONS, Journal of applied physics, 84(1), 1998, pp. 496-502
Authors:
POORTMANS J
JAIN SC
TOTTERDELL DHJ
CAYMAX M
NIJS JF
MERTENS RP
VANOVERSTRAETEN R
Citation: J. Poortmans et al., THEORETICAL CALCULATION AND EXPERIMENTAL-EVIDENCE OF THE REAL AND APPARENT BANDGAP NARROWING DUE TO HEAVY DOPING IN P-TYPE SI AND STRAINED SI1-XGEX LAYERS, Solid-state electronics, 36(12), 1993, pp. 1763-1771
Authors:
RODRIGUEZ A
MORENO EG
PATTYN H
NIJS JF
MERTENS RP
Citation: A. Rodriguez et al., MODEL FOR THE ANOMALOUS OFF-CURRENT OF POLYSILICON THIN-FILM TRANSISTORS AND DIODES, I.E.E.E. transactions on electron devices, 40(5), 1993, pp. 938-943