Authors: SIVOTHTHAMAN S DESCHEPPER P LAUREYS W NIJS JF MERTENS RP

Citation: S. Sivoththaman et al., IMPROVING LOW-TEMPERATURE APCVD SIO2 PASSIVATION BY RAPID THERMAL ANNEALING FOR SI DEVICES, IEEE electron device letters, 19(12), 1998, pp. 505-507

Authors: GHANNAM MY ABOUELSAOOD AA MERTENS RP

Citation: My. Ghannam et al., REFINED MODELING OF OPTICAL CONFINEMENT IN THIN SILICON LAYERS WITH ALAMBERTIAN BACK REFLECTOR FOR SOLAR-CELL APPLICATIONS, Journal of applied physics, 84(1), 1998, pp. 496-502

Authors: SZLUFCIK J SIVOTHTHAMAN S NIJS JF MERTENS RP VANOVERSTRAETEN R

Citation: J. Szlufcik et al., LOW-COST INDUSTRIAL TECHNOLOGIES OF CRYSTALLINE SILICON SOLAR-CELLS, Proceedings of the IEEE, 85(5), 1997, pp. 711-730

Authors: POORTMANS J JAIN SC TOTTERDELL DHJ CAYMAX M NIJS JF MERTENS RP VANOVERSTRAETEN R

Citation: J. Poortmans et al., THEORETICAL CALCULATION AND EXPERIMENTAL-EVIDENCE OF THE REAL AND APPARENT BANDGAP NARROWING DUE TO HEAVY DOPING IN P-TYPE SI AND STRAINED SI1-XGEX LAYERS, Solid-state electronics, 36(12), 1993, pp. 1763-1771

Authors: RODRIGUEZ A MORENO EG PATTYN H NIJS JF MERTENS RP

Citation: A. Rodriguez et al., MODEL FOR THE ANOMALOUS OFF-CURRENT OF POLYSILICON THIN-FILM TRANSISTORS AND DIODES, I.E.E.E. transactions on electron devices, 40(5), 1993, pp. 938-943