Authors:
MISHURNYI VA
DEANDA F
GORBATCHEV AY
DELCASTILLO ICH
NIETONAVARRO J
Citation: Va. Mishurnyi et al., A NEW LPE GROWTH METHOD OF SEMICONDUCTOR HETEROSTRUCTURES WITH THICKNESS PROFILE VARIATION OF EPITAXIAL LAYERS, Journal of electronic materials, 27(8), 1998, pp. 1003-1004