ACNP - Italian Periodicals Catalogue

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Results: 1-9 |

Results: 9

MECHANISM OF RESIDUE FORMATION IN SILICON TRENCH ETCHING USING A BROMINE-BASED PLASMA

Authors: HAYAKAWA T SUZUKI T UESUGI T MITSUSHIMA Y

Citation: T. Hayakawa et al., MECHANISM OF RESIDUE FORMATION IN SILICON TRENCH ETCHING USING A BROMINE-BASED PLASMA, JPN J A P 1, 37(1), 1998, pp. 5-9

EFFECT OF H2O PARTIAL-PRESSURE AND TEMPERATURE DURING TI SPUTTERING ON TEXTURE AND ELECTROMIGRATION IN ALSICU TI/TIN/TI METALLIZATION/

Authors: YOSHIDA T HASHIMOTO S MITSUSHIMA Y OHWAKI T TAGA Y

Citation: T. Yoshida et al., EFFECT OF H2O PARTIAL-PRESSURE AND TEMPERATURE DURING TI SPUTTERING ON TEXTURE AND ELECTROMIGRATION IN ALSICU TI/TIN/TI METALLIZATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2751-2758

VERTICAL MOSFET WITH BURIED GATE

Authors: KODAMA M UESUGI T MITSUSHIMA Y TAGA Y

Citation: M. Kodama et al., VERTICAL MOSFET WITH BURIED GATE, Electronics & communications in Japan. Part 2, Electronics, 80(9), 1997, pp. 19-25

A SOLID-PHASE EPITAXY WITH CLEAN SURFACE FORMATION USING SIH4 AND EVALUATION OF SOI LAYER (VOL 79, PG 71, 1996)

Authors: KODAMA M FUNABASHI H MITSUSHIMA Y TAGA Y

Citation: M. Kodama et al., A SOLID-PHASE EPITAXY WITH CLEAN SURFACE FORMATION USING SIH4 AND EVALUATION OF SOI LAYER (VOL 79, PG 71, 1996), Electronics & communications in Japan. Part 2, Electronics, 80(3), 1997, pp. 101-101

EVALUATION OF THERMAL OXIDE OF SOI LAYERS BY THE SPE METHOD

Authors: KODAMA M FUNABASI H MITSUSHIMA Y TUGA Y

Citation: M. Kodama et al., EVALUATION OF THERMAL OXIDE OF SOI LAYERS BY THE SPE METHOD, Electronics & communications in Japan. Part 2, Electronics, 80(12), 1997, pp. 50-56

PREFERRED ORIENTATION IN TI FILMS SPUTTER-DEPOSITED ON SIO2 GLASS - THE ROLE OF WATER CHEMISORPTION ON THE SUBSTRATE

Authors: OHWAKI T YOSHIDA T HASHIMOTO S HOSOKAWA H MITSUSHIMA Y TAGA Y

Citation: T. Ohwaki et al., PREFERRED ORIENTATION IN TI FILMS SPUTTER-DEPOSITED ON SIO2 GLASS - THE ROLE OF WATER CHEMISORPTION ON THE SUBSTRATE, JPN J A P 2, 36(2A), 1997, pp. 154-157

EFFECT OF WATER-ABSORPTION OF DIELECTRIC UNDERLAYERS ON CRYSTAL ORIENTATION IN AL-SI-CU TI/TIN/TI METALLIZATION/

Authors: YOSHIDA T HASHIMOTO S HOSOKAWA H OHWAKI T MITSUSHIMA Y TAGA Y

Citation: T. Yoshida et al., EFFECT OF WATER-ABSORPTION OF DIELECTRIC UNDERLAYERS ON CRYSTAL ORIENTATION IN AL-SI-CU TI/TIN/TI METALLIZATION/, Journal of applied physics, 81(10), 1997, pp. 7030-7038

CORRELATION BETWEEN DIELECTRIC-BREAKDOWN AND CHARGE GENERATION IN SILICON-OXIDE FILMS

Authors: HAYAKAWA T WATANABE Y FUNABASHI H MITSUSHIMA Y TAGA Y

Citation: T. Hayakawa et al., CORRELATION BETWEEN DIELECTRIC-BREAKDOWN AND CHARGE GENERATION IN SILICON-OXIDE FILMS, Applied physics letters, 70(20), 1997, pp. 2699-2701

A SOLID-PHASE EPITAXY WITH CLEAN SURFACE FORMATION USING SIH4 AND EVALUATION OF SOI LAYER

Authors: KODAMA M FUNABASHI H MITSUSHIMA Y TAGA Y

Citation: M. Kodama et al., A SOLID-PHASE EPITAXY WITH CLEAN SURFACE FORMATION USING SIH4 AND EVALUATION OF SOI LAYER, Electronics & communications in Japan. Part 2, Electronics, 79(12), 1996, pp. 71-78

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