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Citation: S. Yamamichi et al., A STACKED CAPACITOR TECHNOLOGY WITH ECR PLASMA MOCVD (BA,SR)TIO3 AND RUO2 RU/TIN/TISIX STORAGE NODES FOR GB-SCALE DRAMS/, I.E.E.E. transactions on electron devices, 44(7), 1997, pp. 1076-1083
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Citation: Tb. Nishimura et al., SRTIO3 CAPACITOR WITH RELATIVE DIELECTRIC-CONSTANT OF 200 ON GAAS SUBSTRATE AT MICROWAVE FREQUENCY, JPN J A P 2, 35(12B), 1996, pp. 1683-1684
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