Authors: CHAN WWT SIN JKO MOK PKT WONG SS

Citation: Wwt. Chan et al., A POWER IC TECHNOLOGY WITH EXCELLENT CROSS-TALK ISOLATION, IEEE electron device letters, 17(10), 1996, pp. 467-469

Authors: MOK PKT NEZAR A SALAMA CAT

Citation: Pkt. Mok et al., A SELF-ALIGNED TRENCHED CATHODE LATERAL INSULATED GATE BIPOLAR-TRANSISTOR WITH HIGH LATCH-UP RESISTANCE, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2236-2239

Authors: MOK PKT SALAMA CAT

Citation: Pkt. Mok et Cat. Salama, A NOVEL HIGH-VOLTAGE HIGH-SPEED MESFET USING A STANDARD GAAS DIGITAL IC PROCESS, I.E.E.E. transactions on electron devices, 41(2), 1994, pp. 246-250