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Results: 1-11 |
Results: 11
ARSENIC INCORPORATION AND DOPING BEHAVIOR IN SILICON AND SIGE EPITAXIAL LAYERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: FERNANDEZ JM XIE MH MATSUMURA A MOKLER SM ZHANG J JOYCE BA
Citation: Jm. Fernandez et al., ARSENIC INCORPORATION AND DOPING BEHAVIOR IN SILICON AND SIGE EPITAXIAL LAYERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Materials science and technology, 11(4), 1995, pp. 396-399
GROWTH AND CHARACTERIZATION OF SI SIGE MICROSTRUCTURES ON PATTERNED SI SUBSTRATES USING GAS-SOURCE MOLECULAR-BEAM EPITAXY/
Authors: ZHANG J ZHANG XM MATSUMURA A MARINOPOULOU A HARTUNG J ANWAR N PARRY G XIE MH MOKLER SM FERNANDEZ JM JOYCE BA
Citation: J. Zhang et al., GROWTH AND CHARACTERIZATION OF SI SIGE MICROSTRUCTURES ON PATTERNED SI SUBSTRATES USING GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 150(1-4), 1995, pp. 950-954
GROWTH AND CHARACTERIZATION OF SI1-XGEX SI MULTILAYERS ON PATTERNED SI(001) SUBSTRATES USING GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: ZHANG J MARINOPOULOU A HARTUNG J LIGHTOWLERS EC ANWAR N PARRY G XIE MH MOKLER SM WU XD JOYCE BA
Citation: J. Zhang et al., GROWTH AND CHARACTERIZATION OF SI1-XGEX SI MULTILAYERS ON PATTERNED SI(001) SUBSTRATES USING GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1139-1141
GROWTH DYNAMICS STUDIED BY RHEED DURING SI GE EPITAXY FROM GASEOUS HYDRIDES/
Authors: XIE MH ZHANG J MOKLER SM FERNANDEZ J JOYCE BA
Citation: Mh. Xie et al., GROWTH DYNAMICS STUDIED BY RHEED DURING SI GE EPITAXY FROM GASEOUS HYDRIDES/, Surface science, 320(3), 1994, pp. 259-270
REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS OFGERMANIUM GROWTH ON SI(100) USING GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: XIE MH ZHANG J MOKLER SM FERNANDEZ JM JOYCE BA
Citation: Mh. Xie et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS OFGERMANIUM GROWTH ON SI(100) USING GAS-SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 65(24), 1994, pp. 3066-3068
APPLICATIONS OF RHEED TO THE STUDY OF GROWTH DYNAMICS AND SURFACE-CHEMISTRY DURING MBE
Authors: JOYCE BA OHTANI N MOKLER SM SHITARA T ZHANG J NEAVE JH FAWCETT PN
Citation: Ba. Joyce et al., APPLICATIONS OF RHEED TO THE STUDY OF GROWTH DYNAMICS AND SURFACE-CHEMISTRY DURING MBE, Surface science, 298(2-3), 1993, pp. 399-407
SI1-XGEX ALLOY GROWTH ON SI(111) SURFACES FROM GASEOUS HYDRIDE SOURCES
Authors: MOKLER SM JOYCE BA
Citation: Sm. Mokler et Ba. Joyce, SI1-XGEX ALLOY GROWTH ON SI(111) SURFACES FROM GASEOUS HYDRIDE SOURCES, Surface science, 298(1), 1993, pp. 43-49
SIMULATION STUDIES OF GE SURFACE SEGREGATION DURING GAS-SOURCE MBE GROWTH OF SI SI1-XGEX HETEROSTRUCTURES/
Authors: OHTANI N MOKLER SM JOYCE BA
Citation: N. Ohtani et al., SIMULATION STUDIES OF GE SURFACE SEGREGATION DURING GAS-SOURCE MBE GROWTH OF SI SI1-XGEX HETEROSTRUCTURES/, Surface science, 295(3), 1993, pp. 325-334
INVESTIGATION OF SURFACE RECONSTRUCTION DOMAIN BEHAVIOR DURING SI-GSMBE
Authors: OHTANI N MOKLER SM ZHANG J JOYCE BA
Citation: N. Ohtani et al., INVESTIGATION OF SURFACE RECONSTRUCTION DOMAIN BEHAVIOR DURING SI-GSMBE, Journal of crystal growth, 127(1-4), 1993, pp. 461-466
GROWTH-RATE DEPENDENCE ON GEH4 DURING GAS-SOURCE MBE OF SIXGE1-X ALLOYS GROWN FROM SI2H6 AND GEH4
Authors: MOKLER SM OHTANI N XIE MH ZHANG X JOYCE BA
Citation: Sm. Mokler et al., GROWTH-RATE DEPENDENCE ON GEH4 DURING GAS-SOURCE MBE OF SIXGE1-X ALLOYS GROWN FROM SI2H6 AND GEH4, Journal of crystal growth, 127(1-4), 1993, pp. 467-471
TRANSIENT GROWTH-RATE CHANGE DURING GAS-SOURCE MOLECULAR-BEAM EPITAXYOF SI1-XGEX ALLOYS
Authors: OHTANI N MOKLER SM XIE MH ZHANG J JOYCE BA
Citation: N. Ohtani et al., TRANSIENT GROWTH-RATE CHANGE DURING GAS-SOURCE MOLECULAR-BEAM EPITAXYOF SI1-XGEX ALLOYS, Applied physics letters, 62(17), 1993, pp. 2042-2044
Risultati: 1-11 |