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Results: 1-14 |
Results: 14
OPTICAL-EMISSION OF A ONE-DIMENSIONAL ELECTRON-GAS IN SEMICONDUCTOR V-SHAPED QUANTUM WIRES
Authors: VANDERMEULEN HP RUBIO J AZCONA I CALLEJA JM ROJAS TC MOLINA SI GARCIA R MARTI U
Citation: Hp. Vandermeulen et al., OPTICAL-EMISSION OF A ONE-DIMENSIONAL ELECTRON-GAS IN SEMICONDUCTOR V-SHAPED QUANTUM WIRES, Physical review. B, Condensed matter, 58(16), 1998, pp. 10705-10708
RELAXATION MECHANISM OF INGAAS SINGLE AND GRADED LAYERS GROWN ON (111)B GAAS
Authors: ROJAS TC MOLINA SI SACEDON A VALTUENA F CALLEJA E GARCIA R
Citation: Tc. Rojas et al., RELAXATION MECHANISM OF INGAAS SINGLE AND GRADED LAYERS GROWN ON (111)B GAAS, Thin solid films, 317(1-2), 1998, pp. 270-273
STRUCTURAL STUDY OF ALGAAS INGAAS SUPERLATTICES GROWN BY MBE ON (III)B GAAS SUBSTRATES/
Authors: ROJAS TC MOLINA SI ROMERO MJ SACEDON A CALLEJA E GARCIA R
Citation: Tc. Rojas et al., STRUCTURAL STUDY OF ALGAAS INGAAS SUPERLATTICES GROWN BY MBE ON (III)B GAAS SUBSTRATES/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 106-109
TRANSMISSION ELECTRON-MICROSCOPY STUDY OF SI DELTA-DOPED GAAS ALGAAS/INGAAS/GAAS PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES/
Authors: MOLINA SI WALTHER T
Citation: Si. Molina et T. Walther, TRANSMISSION ELECTRON-MICROSCOPY STUDY OF SI DELTA-DOPED GAAS ALGAAS/INGAAS/GAAS PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES/, Thin solid films, 307(1-2), 1997, pp. 6-9
INFLUENCE OF THE SURFACE-MORPHOLOGY ON THE RELAXATION OF LOW-STRAINEDINXGA1-XAS LINEAR BUFFER STRUCTURES
Authors: VALTUENA JF SACEDON A ALVAREZ AL IZPURA I CALLE F CALLEJA E MACPHERSON G GOODHEW PJ PACHECO FJ GARCIA R MOLINA SI
Citation: Jf. Valtuena et al., INFLUENCE OF THE SURFACE-MORPHOLOGY ON THE RELAXATION OF LOW-STRAINEDINXGA1-XAS LINEAR BUFFER STRUCTURES, Journal of crystal growth, 182(3-4), 1997, pp. 281-291
HETEROGENEOUS NUCLEATION OF PLANAR DEFECTS IN MN-DOPED ZNSE GAAS/
Authors: MOLINA SI BROWN PD HUMPHREY CJ
Citation: Si. Molina et al., HETEROGENEOUS NUCLEATION OF PLANAR DEFECTS IN MN-DOPED ZNSE GAAS/, Journal of crystal growth, 156(3), 1995, pp. 163-168
DESIGN OF INGAAS LINEAR GRADED BUFFER STRUCTURES
Authors: SACEDON A GONZALEZSANZ F CALLEJA E MUNOZ E MOLINA SI PACHECO FJ ARAUJO D GARCIA R LOURENCO M YANG Z KIDD P DUNSTAN D
Citation: A. Sacedon et al., DESIGN OF INGAAS LINEAR GRADED BUFFER STRUCTURES, Applied physics letters, 66(24), 1995, pp. 3334-3336
A STUDY OF THE DEFECT STRUCTURE IN GAAS-LAYERS GROWN AT LOW AND HIGH-TEMPERATURES ON SI(001) SUBSTRATES
Authors: ARAGON G MOLINA SI PACHECO FJ GONZALEZ Y GONZALEZ L BRIONES F GARCIA R
Citation: G. Aragon et al., A STUDY OF THE DEFECT STRUCTURE IN GAAS-LAYERS GROWN AT LOW AND HIGH-TEMPERATURES ON SI(001) SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 196-199
STEP-GRADED BUFFER LAYER STUDY OF THE STRAIN RELAXATION BY TRANSMISSION ELECTRON-MICROSCOPY
Authors: GONZALEZ D ARAUJO D MOLINA SI SACEDON A CALLEJA E GARCIA R
Citation: D. Gonzalez et al., STEP-GRADED BUFFER LAYER STUDY OF THE STRAIN RELAXATION BY TRANSMISSION ELECTRON-MICROSCOPY, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 497-501
TRANSMISSION ELECTRON-MICROSCOPY STUDY OF INXGA1-XAS GAAS MULTILAYER BUFFER STRUCTURES USED AS DISLOCATION FILTERS/
Authors: GONZALEZ D ARAUJO D SACEDON A CALLEJA E MOLINA SI ARAGON G GARCIA R
Citation: D. Gonzalez et al., TRANSMISSION ELECTRON-MICROSCOPY STUDY OF INXGA1-XAS GAAS MULTILAYER BUFFER STRUCTURES USED AS DISLOCATION FILTERS/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 515-519
A COMPARATIVE-STUDY OF CO-RE SUPERLATTICES SPUTTERED ON GLASS AND SI SUBSTRATES BY GRAZING ANGLE OF INCIDENCE RBS, HRTEM, PAC, MAGNETIC ANDTRANSPORT-PROPERTIES STUDIES
Authors: BARRADAS NP LEAL JL SOARES JC DASILVA MF FREITAS PP ROTS M MOLINA SI GARCIA R
Citation: Np. Barradas et al., A COMPARATIVE-STUDY OF CO-RE SUPERLATTICES SPUTTERED ON GLASS AND SI SUBSTRATES BY GRAZING ANGLE OF INCIDENCE RBS, HRTEM, PAC, MAGNETIC ANDTRANSPORT-PROPERTIES STUDIES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 202-205
STRAIN RELIEF IN LINEARLY GRADED COMPOSITION BUFFER LAYERS - A DESIGNSCHEME TO GROW DISLOCATION-FREE (LESS-THAN-10(5) CM(-2)) AND UNSTRAINED EPILAYERS
Authors: MOLINA SI PACHECO FJ ARAUJO D GARCIA R SACEDON A CALLEJA E YANG Z KIDD P
Citation: Si. Molina et al., STRAIN RELIEF IN LINEARLY GRADED COMPOSITION BUFFER LAYERS - A DESIGNSCHEME TO GROW DISLOCATION-FREE (LESS-THAN-10(5) CM(-2)) AND UNSTRAINED EPILAYERS, Applied physics letters, 65(19), 1994, pp. 2460-2462
A STUDY OF THE EVOLUTION PROCESS OF ANTIPHASE BOUNDARIES IN GAAS ON SI
Authors: MOLINA SI ARAGON G GARCIA R GONZALEZ Y GONZALEZ L BRIONES F
Citation: Si. Molina et al., A STUDY OF THE EVOLUTION PROCESS OF ANTIPHASE BOUNDARIES IN GAAS ON SI, Journal of electronic materials, 22(5), 1993, pp. 567-572
STRUCTURAL CHARACTERIZATION OF HIGHLY STRAINED INAS N-MONOLAYER LASERS AND QUANTUM-WELL STRUCTURES BY X-RAY-DIFFRACTION AND TRANSMISSION ELECTRON-MICROSCOPY
Authors: MAZUELAS A MOLINA SI ARAGON G MELENDEZ J DOTOR ML HUERTAS P BRIONES F
Citation: A. Mazuelas et al., STRUCTURAL CHARACTERIZATION OF HIGHLY STRAINED INAS N-MONOLAYER LASERS AND QUANTUM-WELL STRUCTURES BY X-RAY-DIFFRACTION AND TRANSMISSION ELECTRON-MICROSCOPY, Journal of crystal growth, 127(1-4), 1993, pp. 596-600
Risultati: 1-14 |