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Results: 1-8 |
Results: 8

Authors: MARTIN S ROLLAND A MOTTET S SZYDLO N LEBRUN H
Citation: S. Martin et al., 2D NUMERICAL-SIMULATION OF A-SI-H TFTS - APPLICATION TO PARASITIC CONTACT RESISTANCES EVALUATION, Thin solid films, 296(1-2), 1997, pp. 129-132

Authors: PLEVERT L MOTTET S BONNEL M DUHAMEL N
Citation: L. Plevert et al., MINIMAL GLASS DEFORMATIONS WITH RAPID THERMAL ANNEALING CONTROL, JPN J A P 1, 34(2A), 1995, pp. 419-424

Authors: PLEUMEEKERS JL SIMON CM MOTTET S
Citation: Jl. Pleumeekers et al., INVESTIGATION INTO THE PROPERTIES OF THE EXPLICIT METHOD FOR THE RESOLUTION OF THE SEMICONDUCTOR-DEVICE EQUATIONS, IEEE transactions on computer-aided design of integrated circuits and systems, 14(4), 1995, pp. 459-463

Authors: MOTTET S VERMEULEN PF
Citation: S. Mottet et Pf. Vermeulen, A NEW APPROACH OF THE BOX METHOD ADAPTED TO ANY CONVEX POLYGONAL MESH, Compel, 13(4), 1994, pp. 599-607

Authors: PLEUMEEKERS JL MERCIER T CLEROT F MOTTET S
Citation: Jl. Pleumeekers et al., 2-CARRIER QUANTUM-WELL TRANSPORT MODEL WITH APPLICATION TO SEMICONDUCTOR OPTICAL AMPLIFIERS, Compel, 13(4), 1994, pp. 693-702

Authors: SALAUN S GAUNEAU M LECORRE A MOTTET S VIALLET JE GUENEGOU H KERMEL C
Citation: S. Salaun et al., HIGH-RESISTIVITY INP-TI,BE BY GSMBE, Electronics Letters, 30(24), 1994, pp. 2076-2077

Authors: RIPOCHE G PEYRE JL LAMBERT M MOTTET S
Citation: G. Ripoche et al., HIGH-SPEED (GREATER-THAN-OR-EQUAL-TO-6 GHZ) INGAAS INP AVALANCHE PHOTODIODES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH A THIN QUATERNARY GRADING LAYER FOR HIGH BIT-RATE (GREATER-THAN-OR-EQUAL-TO 5 GBIT/S) SYSTEMS/, Journal de physique. III, 3(9), 1993, pp. 1761-1767

Authors: LUQUET H GOUSKOV L PEROTIN M KARIM M RMOU A MOTTET S
Citation: H. Luquet et al., DEPENDENCE OF IMPACT IONIZATION COEFFICIENTS ON ELECTRIC-FIELD PROFILE AND INJECTION MODE-APPROXIMATIONS, Journal of applied physics, 74(1), 1993, pp. 635-638
Risultati: 1-8 |