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Results:
1-13
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Results: 13
Authors:
MOY AM
PICKRELL GW
CHENG KY
Citation: Am. Moy et al., GROWTH OPTIMIZATION OF GAXIN1-XASYP1-Y GAAS(0.98 MU-M) QUANTUM-WIRE HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1347-1351
Authors:
WOHLERT DE
MOY AM
CHOU LJ
CHENG KY
HSIEH KC
Citation: De. Wohlert et al., TEMPERATURE STABILIZED 1.55 MU-M PHOTOLUMINESCENCE IN STRAINED GAXIN1-XAS QUANTUM-WIRE HETEROSTRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1352-1355
Authors:
TANG Y
RICH DH
MOY AM
CHENG KY
Citation: Y. Tang et al., AN OPTICAL METHOD FOR STUDYING CARRIER DIFFUSION IN STRAINED (INP)(2)(GAP)(2) QUANTUM WIRES/, Applied physics letters, 72(1), 1998, pp. 55-57
Authors:
TANG Y
RICH DH
MOY AM
CHENG KY
Citation: Y. Tang et al., SPATIAL VARIATIONS IN LUMINESCENCE AND CARRIER RELAXATION IN MOLECULAR-BEAM EPITAXIAL GROWN (INP)(2) (GAP)(2) QUANTUM WIRES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1034-1039
Authors:
MOY AM
CHEN AC
CHENG KY
CHOU LJ
HSIEH KC
Citation: Am. Moy et al., GROWTH OF GAINASP QUANTUM-WIRE HETEROSTRUCTURES USING THE STRAIN-INDUCED LATERAL-LAYER ORDERING PROCESS, Journal of crystal growth, 175, 1997, pp. 819-824
Authors:
MOY AM
CHEN AC
CHENG KY
CHOU LJ
HSIEH KC
TU CW
Citation: Am. Moy et al., VISIBLE WAVELENGTH (6470-ANGSTROM) GAXIN1-XP GAAS0.66P0.34 QUANTUM-WIRE HETEROSTRUCTURES/, Journal of applied physics, 80(12), 1996, pp. 7124-7129
Authors:
CHEN AC
MOY AM
CHENG KY
Citation: Ac. Chen et al., YELLOW (5735 ANGSTROM) EMISSION GAINP MULTIPLE-QUANTUM-WELL LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 762-764
Authors:
FAYFIELD RT
CHEN J
HAGEDORN MS
HIGMAN TK
MOY AM
CHENG KY
Citation: Rt. Fayfield et al., ULTRATHIN NITRIDE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AND THEIR EFFECTS ON INTERFACE STATES IN SILICON METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 786-788
Authors:
PEARAH PJ
CHEN AC
MOY AM
HSIEH KC
CHENG KY
Citation: Pj. Pearah et al., STRAINED ALGAINP QUANTUM-WIRE LASERS, Journal of crystal growth, 150(1-4), 1995, pp. 293-298
Authors:
CHEN AC
MOY AM
CHOU LJ
HSIEH KC
CHENG KY
Citation: Ac. Chen et al., EFFECT OF SUBSTRATE MISORIENTATION ON THE GROWTH OF GAXIN1-XP LATERALQUANTUM-WELLS, Applied physics letters, 66(20), 1995, pp. 2694-2696
Authors:
PEARAH PJ
CHEN AC
MOY AM
HSIEH KC
CHENG KY
Citation: Pj. Pearah et al., ALGAINP MULTIPLE-QUANTUM WIRE HETEROSTRUCTURE LASERS PREPARED BY THE STRAIN-INDUCED LATERAL-LAYER ORDERING PROCESS (VOL 30, PG 608-618, 1994), IEEE journal of quantum electronics, 30(8), 1994, pp. 1966-1966
Authors:
CHEN AC
MOY AM
CHENG KY
TU CW
Citation: Ac. Chen et al., YELLOW EMISSION (573.5NM) GA0.65IN0.35P LASERS GROWN ON GAAS0.6P0.4 SUBSTRATES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Electronics Letters, 30(24), 1994, pp. 2049-2050
Authors:
PEARAH PJ
CHEN AC
MOY AM
HSIEH KC
CHENG KY
Citation: Pj. Pearah et al., FORMATION OF MULTIPLE-QUANTUM WIRES BY STRAIN-INDUCED LATERAL-LAYER ORDERING PROCESS, Journal of crystal growth, 127(1-4), 1993, pp. 900-903
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