Citation: K. Yokoo et al., EMISSION CHARACTERISTICS OF METAL-OXIDE SEMICONDUCTOR ELECTRON-TUNNELING CATHODE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 429-432
Citation: T. Matsuura et al., SELF-LIMITED LAYER-BY-LAYER ETCHING OF SI BY ALTERNATED CHLORINE ADSORPTION AND AR+ ION IRRADIATION, Applied physics letters, 63(20), 1993, pp. 2803-2805
Citation: J. Murota et al., SILICON ATOMIC LAYER GROWTH CONTROLLED BY FLASH HEATING IN CHEMICAL-VAPOR DEPOSITION USING SIH4 GAS, Applied physics letters, 62(19), 1993, pp. 2353-2355