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Authors: MUTHUVENKATRAMAN S GORANTLA S VENKAT R DORSEY DL
Citation: S. Muthuvenkatraman et al., ANTISITE ARSENIC INCORPORATION IN THE LOW-TEMPERATURE MBE OF GALLIUM-ARSENIDE - PHYSICS AND MODELING, Journal of electronic materials, 27(5), 1998, pp. 472-478

Authors: MUTHUVENKATRAMAN S GORANTLA S VENKAT R DORSEY DL
Citation: S. Muthuvenkatraman et al., THEORETICAL-STUDY OF ANTISITE ARSENIC INCORPORATION IN THE LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE, Journal of applied physics, 83(11), 1998, pp. 5845-5851

Authors: GORANTLA S MUTHUVENKATRAMAN S VENKAT R
Citation: S. Gorantla et al., A MODEL FOR THERMAL GROWTH OF ULTRATHIN SILICON DIOXIDE IN O-2 AMBIENT - A RATE-EQUATION APPROACH, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 336-338

Authors: VENKATASUBRAMANIAN R GORANTLA S MUTHUVENKATRAMAN S DORSEY DL
Citation: R. Venkatasubramanian et al., A STOCHASTIC-MODEL FOR CRYSTAL-AMORPHOUS TRANSITION IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL SI(111), Journal of applied physics, 80(11), 1996, pp. 6219-6222
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