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Results:
1-7
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Results: 7
Authors:
Kishi, A
Doi, T
Ohnisi, S
Awaya, N
Iguchi, K
Sakiyama, K
Maa, JS
Hsu, ST
Citation: A. Kishi et al., The effect of Al interlayer on TiSi2 formation, JPN J A P 1, 40(6A), 2001, pp. 3933-3937
Authors:
Maa, JS
Ono, Y
Tweet, DJ
Zhang, FY
Hsu, ST
Citation: Js. Maa et al., Effect of interlayer on thermal stability of nickel silicide, J VAC SCI A, 19(4), 2001, pp. 1595-1599
Authors:
Maa, JS
Ying, H
Zhang, FY
Citation: Js. Maa et al., Effect of temperature on etch rate of iridium and platinum in CF4/O-2, J VAC SCI A, 19(4), 2001, pp. 1312-1314
Authors:
Ying, H
Li, TK
Maa, JS
Zhang, FY
Hsu, ST
Gao, YF
Engelhard, M
Citation: H. Ying et al., Plasma etching of lead germanate (PGO) ferroelectric thin film, J VAC SCI A, 19(4), 2001, pp. 1341-1345
Authors:
Li, TK
Hsu, ST
Ulrich, B
Ying, H
Stecker, L
Evans, D
Ono, Y
Maa, JS
Lee, JJ
Citation: Tk. Li et al., Fabrication and characterization of a Pb5Ge3O11 one-transistor-memory device, APPL PHYS L, 79(11), 2001, pp. 1661-1663
Authors:
Zhang, FY
Maa, JS
Hsu, ST
Ohnishi, S
Zhen, WD
Citation: Fy. Zhang et al., Studies of Ir-Ta-O as high temperature stable electrode material and its application for ferroelectric SrBi2Ta2O9 thin film deposition, JPN J A P 2, 38(12A), 1999, pp. L1447-L1449
Authors:
Maa, JS
Howard, DJ
He, SS
Tweet, DJ
Stecker, L
Stecker, G
Hsu, ST
Citation: Js. Maa et al., Selectivity to silicon nitride in chemical vapor deposition of titanium silicide, J VAC SCI B, 17(5), 1999, pp. 2243-2247
Risultati:
1-7
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