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Results: 1-9 |
Results: 9
Status of SiC power devices at Northrop Grumman
Authors: Agarwal, AK Seshadri, S Casady, JB Mani, SS MacMillan, MF Saks, N Burk, AA Augustine, G Balakrishna, V Sanger, PA Brandt, CD Rodrigues, R
Citation: Ak. Agarwal et al., Status of SiC power devices at Northrop Grumman, DIAM RELAT, 8(2-5), 1999, pp. 295-301
Advances in SiC materials and devices: an industrial point of view
Authors: Siergiej, RR Clarke, RC Sriram, S Agarwal, AK Bojko, RJ Morse, AW Balakrishna, V MacMillan, MF Burk, AA Brandt, CD
Citation: Rr. Siergiej et al., Advances in SiC materials and devices: an industrial point of view, MAT SCI E B, 61-2, 1999, pp. 9-17
Kinetics and morphological stability in sublimation growth of 6H and 4H SIC epitaxial layers
Authors: Syvajarvi, M Yakimova, R Kakanakova-Georgieva, A MacMillan, MF Janzen, E
Citation: M. Syvajarvi et al., Kinetics and morphological stability in sublimation growth of 6H and 4H SIC epitaxial layers, MAT SCI E B, 61-2, 1999, pp. 161-164
Microhardness of 6H-SiC epitaxial layers grown by sublimation
Authors: Kakanakova-Georgieva, A Trifonova, EP Yakimova, R MacMillan, MF Janzen, E
Citation: A. Kakanakova-georgieva et al., Microhardness of 6H-SiC epitaxial layers grown by sublimation, CRYST RES T, 34(8), 1999, pp. 943-947
SiC and GaN wide bandgap semiconductor materials and devices
Authors: Burk, AA O'Loughlin, MJ Siergiej, RR Agarwal, AK Sriram, S Clarke, RC MacMillan, MF Balakrishna, V Brandt, CD
Citation: Aa. Burk et al., SiC and GaN wide bandgap semiconductor materials and devices, SOL ST ELEC, 43(8), 1999, pp. 1459-1464
Morphology and polytype disturbances in sublimation growth of SiC epitaxial layers
Authors: Syvajarvi, M Yakimova, R Glans, PA Henry, A MacMillan, MF Johansson, LI Janzen, E
Citation: M. Syvajarvi et al., Morphology and polytype disturbances in sublimation growth of SiC epitaxial layers, J CRYST GR, 199, 1999, pp. 1019-1023
Growth of 6H and 4H-SiC by sublimation epitaxy
Authors: Syvajarvi, M Yakimova, R Tuominen, M Kakanakova-Georgieva, A MacMillan, MF Henry, A Wahab, Q Janzen, E
Citation: M. Syvajarvi et al., Growth of 6H and 4H-SiC by sublimation epitaxy, J CRYST GR, 197(1-2), 1999, pp. 155-162
Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC
Authors: Son, NT Ellison, A Magnusson, B MacMillan, MF Chen, WM Monemar, B Janzen, E
Citation: Nt. Son et al., Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC, J APPL PHYS, 86(8), 1999, pp. 4348-4353
4H-SiC power devices for use in power electronic motor control
Authors: Casady, JB Agarwal, AK Seshadri, S Siergiej, RR Rowland, LB MacMillan, MF Sheridan, DC Sanger, PA Brandt, CD
Citation: Jb. Casady et al., 4H-SiC power devices for use in power electronic motor control, SOL ST ELEC, 42(12), 1998, pp. 2165-2176
Risultati: 1-9 |