ACNP - Italian Periodicals Catalogue

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Results: 1-18 |

Results: 18

In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells

Authors: Ghezzi, C Cioce, B Magnanini, R Parisini, A

Citation: C. Ghezzi et al., In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells, J APPL PHYS, 90(10), 2001, pp. 5166-5170

Influence of As incorporation on the deviation from Vegard's law in the AlxGa1-xSb/GaSb system

Authors: Bocchi, C Franchi, S Germini, F Baraldi, A Magnanini, R De Salvador, D Berti, M Drigo, AV

Citation: C. Bocchi et al., Influence of As incorporation on the deviation from Vegard's law in the AlxGa1-xSb/GaSb system, J APPL PHYS, 89(8), 2001, pp. 4676-4678

Optical properties of GaSb/Al0.4Ga0.6Sb multiple quantum wells

Authors: Bottazzi, C Parisini, A Tarricone, L Magnanini, R Baraldi, A

Citation: C. Bottazzi et al., Optical properties of GaSb/Al0.4Ga0.6Sb multiple quantum wells, PHYS REV B, 62(4), 2000, pp. 2731-2736

Wave propagation in a 2-D optical waveguide

Authors: Magnanini, R Santosa, F

Citation: R. Magnanini et F. Santosa, Wave propagation in a 2-D optical waveguide, SIAM J A MA, 61(4), 2000, pp. 1237-1252

High-resolution x-ray diffraction, x-ray standing-wave, and transmission electron microscopy study of Sb-based single-quantum-well structures

Authors: Mukhamedzhanov, EK Bocchi, C Franchi, S Baraldi, A Magnanini, R Nasi, L

Citation: Ek. Mukhamedzhanov et al., High-resolution x-ray diffraction, x-ray standing-wave, and transmission electron microscopy study of Sb-based single-quantum-well structures, J APPL PHYS, 87(9), 2000, pp. 4234-4239

Study of the lattice strain relaxation in the Ga1-xAlxSb/GaSb system by x-ray topography and high resolution diffraction

Authors: Bocchi, C Germini, F Franchi, S Baraldi, A Gennari, S Magnanini, R Drigo, AV

Citation: C. Bocchi et al., Study of the lattice strain relaxation in the Ga1-xAlxSb/GaSb system by x-ray topography and high resolution diffraction, J MAT S-M E, 10(3), 1999, pp. 185-190

Optical study of Al0.4Ga0.6Sb/GaSb single quantum wells

Authors: Ferrini, R Geddo, M Guizzetti, G Patrini, M Franchi, S Bocchi, C Mukhamedzhanov, EK Baraldi, A Magnanini, R

Citation: R. Ferrini et al., Optical study of Al0.4Ga0.6Sb/GaSb single quantum wells, PHYS REV B, 59(23), 1999, pp. 15395-15401

Thermoreflectance study of the direct optical gap in epitaxial AlxGa1-xSb (x <= 0.5)

Authors: Bellani, V Geddo, M Guizzetti, G Franchi, S Magnanini, R

Citation: V. Bellani et al., Thermoreflectance study of the direct optical gap in epitaxial AlxGa1-xSb (x <= 0.5), PHYS REV B, 59(19), 1999, pp. 12272-12274

Spatial critical points not moving along the heat flow II: The centrosymmetric case (vol 230, pg 695, 1999)

Authors: Magnanini, R Sakaguchi, S

Citation: R. Magnanini et S. Sakaguchi, Spatial critical points not moving along the heat flow II: The centrosymmetric case (vol 230, pg 695, 1999), MATH Z, 232(2), 1999, pp. 389-389

Spatial critical points not moving along the heat flow II: The centrosymmetric case

Authors: Magnanini, R Sakaguchi, S

Citation: R. Magnanini et S. Sakaguchi, Spatial critical points not moving along the heat flow II: The centrosymmetric case, MATH Z, 230(4), 1999, pp. 695-712

Assessment of Vegard's law validity in the Ga1-xAlxSb/GaSb epitaxial system

Authors: Germini, F Bocchi, C Ferrari, C Franchi, S Baraldi, A Magnanini, R De Salvador, D Berti, M Drigo, AV

Citation: F. Germini et al., Assessment of Vegard's law validity in the Ga1-xAlxSb/GaSb epitaxial system, J PHYS D, 32(10A), 1999, pp. A12-A15

Composition control of GaSbAs alloys

Authors: Bosacchi, A Franchi, S Allegri, P Avanzini, V Baraldi, A Magnanini, R Berti, M De Salvador, D Sinha, SK

Citation: A. Bosacchi et al., Composition control of GaSbAs alloys, J CRYST GR, 202, 1999, pp. 858-860

Interband optical properties of molecular-beam epitaxially grown GaAs1-xSbx on GaAs substrates

Authors: Ferrini, R Geddo, M Guizzetti, G Patrini, M Franchi, S Bocchi, C Germini, F Baraldi, A Magnanini, R

Citation: R. Ferrini et al., Interband optical properties of molecular-beam epitaxially grown GaAs1-xSbx on GaAs substrates, J APPL PHYS, 86(8), 1999, pp. 4706-4708

Measurement of aluminum concentration in the Ga1-xAlxSb/GaSb epitaxial system

Authors: Bocchi, C Franchi, S Germini, F Baraldi, A Magnanini, R De Salvador, D Berti, M Drigo, AV

Citation: C. Bocchi et al., Measurement of aluminum concentration in the Ga1-xAlxSb/GaSb epitaxial system, J APPL PHYS, 86(3), 1999, pp. 1298-1305

Occupancy level of the DX center in Te-doped AlxGa1-xSb

Authors: Baraldi, A Ghezzi, C Parisini, A Magnanini, R Tarricone, L Franchi, S

Citation: A. Baraldi et al., Occupancy level of the DX center in Te-doped AlxGa1-xSb, J APPL PHYS, 85(1), 1999, pp. 256-263

A shallow state coexisting with the DX center in Te-doped AlGaSb

Authors: Baraldi, A Franchi, S Ghezzi, C Magnanini, R Parisini, A Tarricone, L

Citation: A. Baraldi et al., A shallow state coexisting with the DX center in Te-doped AlGaSb, PHYS ST S-B, 210(2), 1998, pp. 759-763

Minority carrier capture at DX centers in AlGaSb Schottky diodes

Authors: Gombia, E Mosca, R Franchi, S Ghezzi, C Magnanini, R

Citation: E. Gombia et al., Minority carrier capture at DX centers in AlGaSb Schottky diodes, J APPL PHYS, 84(9), 1998, pp. 5337-5341

Photoreflectance of GaSb/Al0.4Ga0.6Sb single quantum wells

Authors: Geddo, M Ferrini, R Patrini, M Franchi, S Baraldi, A Magnanini, R

Citation: M. Geddo et al., Photoreflectance of GaSb/Al0.4Ga0.6Sb single quantum wells, APPL PHYS L, 73(9), 1998, pp. 1254-1256

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