Authors: Lambert, B Malbert, N Labat, N Verdier, F Touboul, A

Citation: B. Lambert et al., Empirical modeling of LF gate noise irm GaAs DCFET in impact ionization regime, IEEE ELEC D, 22(2), 2001, pp. 50-52

Authors: Lambert, B Malbert, N Labat, N Verdier, F Touboul, A Huguet, P Bonnet, R

Citation: B. Lambert et al., Evolution of LF noise in power PHEMT's submitted to RF and DC step stresses, MICROEL REL, 41(9-10), 2001, pp. 1573-1578

Authors: Maneux, C Labat, N Malbert, N Touboul, A Danto, Y Dumas, JM Riet, M Benchimol, JL

Citation: C. Maneux et al., Experimental procedure for the evaluation of GaAs-based HBT's reliability, MICROELEC J, 32(4), 2001, pp. 357-371

Authors: Lambert, B Malbert, N Verdier, F Labat, N Touboul, A Vandamme, LKJ

Citation: B. Lambert et al., Low frequency gate noise in a diode-connected MESFET: measurements and modeling, IEEE DEVICE, 48(4), 2001, pp. 628-633