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Authors:
Grahn, JV
Fosshaug, H
Jargelius, M
Jonsson, P
Linder, M
Malm, BG
Mohadjeri, B
Pejnefors, J
Radamson, HH
Sanden, M
Wang, YB
Landgren, G
Ostling, M
Citation: Jv. Grahn et al., A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget, SOL ST ELEC, 44(3), 2000, pp. 549-554
Citation: Bg. Malm et al., Influence of transient enhanced diffusion of the intrinsic base dopant profile on SiGeHBT DC and HF characteristics, SOL ST ELEC, 44(10), 2000, pp. 1747-1752
Citation: M. Sanden et al., Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors, MICROEL REL, 40(11), 2000, pp. 1863-1867
Authors:
Linder, M
Malm, BG
Ma, P
Grahn, JV
Zhang, SL
Ostling, M
Citation: M. Linder et al., The effect of emitter overetch and base implantation tilt on the performance of double polysilicon bipolar transistors, PHYS SCR, T79, 1999, pp. 246-249