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Citation: Bg. Malm et al., Implanted collector profile optimization in a SiGeHBT process, SOL ST ELEC, 45(3), 2001, pp. 399-404

Authors: Sanden, M Malm, BG Grahn, JV Ostling, M

Citation: M. Sanden et al., Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors, MICROEL REL, 41(6), 2001, pp. 881-886

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Citation: Jv. Grahn et al., A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget, SOL ST ELEC, 44(3), 2000, pp. 549-554

Authors: Malm, BG Grahn, JV Ostling, M

Citation: Bg. Malm et al., Influence of transient enhanced diffusion of the intrinsic base dopant profile on SiGeHBT DC and HF characteristics, SOL ST ELEC, 44(10), 2000, pp. 1747-1752

Authors: Sanden, M Malm, BG Grahn, JV Ostling, M

Citation: M. Sanden et al., Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors, MICROEL REL, 40(11), 2000, pp. 1863-1867

Authors: Linder, M Malm, BG Ma, P Grahn, JV Zhang, SL Ostling, M

Citation: M. Linder et al., The effect of emitter overetch and base implantation tilt on the performance of double polysilicon bipolar transistors, PHYS SCR, T79, 1999, pp. 246-249