Authors:
Mamor, M
Fu, Y
Nur, O
Willander, M
Bengtsson, S
Citation: M. Mamor et al., Leakage current and capacitance characteristics of Si/SiO2/Si single-barrier varactor, APPL PHYS A, 72(5), 2001, pp. 633-637
Authors:
Ouacha, H
Mamor, M
Willander, M
Ouacha, A
Auret, FD
Citation: H. Ouacha et al., Impact of plasma etching on the noise performance of Ti/p-Si and Ti/p-Si1-xGex Schottky contacts, J APPL PHYS, 87(8), 2000, pp. 3858-3863
Authors:
Mamor, M
Ouacha, H
Willander, M
Auret, FD
Goodman, SA
Ouacha, A
Sveinbjornsson, E
Citation: M. Mamor et al., High-energy He-ion irradiation-induced defects and their influence on the noise behavior of Pd/n-Si1-xGex Schottky junctions, APPL PHYS L, 76(25), 2000, pp. 3750-3752
Authors:
Mamor, M
Auret, FD
Willander, M
Goodman, SA
Myburg, G
Meyer, F
Citation: M. Mamor et al., Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma, SEMIC SCI T, 14(7), 1999, pp. 611-614
Authors:
Mamor, M
Auret, FD
Goodman, SA
Malherbe, JB
Citation: M. Mamor et al., Argon plasma sputter etching induced defect levels in strained, epitaxial p-type Si-Ge alloys, THIN SOL FI, 344, 1999, pp. 416-419
Authors:
Mamor, M
Nur, O
Karlsteen, M
Willander, M
Auret, FD
Citation: M. Mamor et al., Fermi-level pinning and Schottky barrier heights on epitaxially grown fully strained and partially relaxed n-type Si1-xGex layers, J APPL PHYS, 86(12), 1999, pp. 6890-6894