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Results: 1-10 |
Results: 10
Leakage current and capacitance characteristics of Si/SiO2/Si single-barrier varactor
Authors: Mamor, M Fu, Y Nur, O Willander, M Bengtsson, S
Citation: M. Mamor et al., Leakage current and capacitance characteristics of Si/SiO2/Si single-barrier varactor, APPL PHYS A, 72(5), 2001, pp. 633-637
Configurationally metastable defects in irradiated epitaxially grown boron-doped p-type Si - art. no. 045201
Authors: Mamor, M Willander, M Auret, FD Meyer, WE Sveinbjornsson, E
Citation: M. Mamor et al., Configurationally metastable defects in irradiated epitaxially grown boron-doped p-type Si - art. no. 045201, PHYS REV B, 6304(4), 2001, pp. 5201
Short-range order and strain in SiGeC alloys probed by phonons
Authors: Finkman, E Meyer, F Mamor, M
Citation: E. Finkman et al., Short-range order and strain in SiGeC alloys probed by phonons, J APPL PHYS, 89(5), 2001, pp. 2580-2587
Impact of plasma etching on the noise performance of Ti/p-Si and Ti/p-Si1-xGex Schottky contacts
Authors: Ouacha, H Mamor, M Willander, M Ouacha, A Auret, FD
Citation: H. Ouacha et al., Impact of plasma etching on the noise performance of Ti/p-Si and Ti/p-Si1-xGex Schottky contacts, J APPL PHYS, 87(8), 2000, pp. 3858-3863
n-Si/SiO2/Si heterostructure barrier varactor diode design
Authors: Fu, Y Mamor, M Willander, M Bengtsson, S Dillner, L
Citation: Y. Fu et al., n-Si/SiO2/Si heterostructure barrier varactor diode design, APPL PHYS L, 77(1), 2000, pp. 103-105
High-energy He-ion irradiation-induced defects and their influence on the noise behavior of Pd/n-Si1-xGex Schottky junctions
Authors: Mamor, M Ouacha, H Willander, M Auret, FD Goodman, SA Ouacha, A Sveinbjornsson, E
Citation: M. Mamor et al., High-energy He-ion irradiation-induced defects and their influence on the noise behavior of Pd/n-Si1-xGex Schottky junctions, APPL PHYS L, 76(25), 2000, pp. 3750-3752
Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma
Authors: Mamor, M Auret, FD Willander, M Goodman, SA Myburg, G Meyer, F
Citation: M. Mamor et al., Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma, SEMIC SCI T, 14(7), 1999, pp. 611-614
Deep level properties of erbium implanted epitaxially grown SiGe
Authors: Mamor, M Auret, FD Goodman, SA Brink, J Hayes, M Meyer, F Vantomme, A Langouche, G Deenapanray, PNK
Citation: M. Mamor et al., Deep level properties of erbium implanted epitaxially grown SiGe, NUCL INST B, 148(1-4), 1999, pp. 523-527
Argon plasma sputter etching induced defect levels in strained, epitaxial p-type Si-Ge alloys
Authors: Mamor, M Auret, FD Goodman, SA Malherbe, JB
Citation: M. Mamor et al., Argon plasma sputter etching induced defect levels in strained, epitaxial p-type Si-Ge alloys, THIN SOL FI, 344, 1999, pp. 416-419
Fermi-level pinning and Schottky barrier heights on epitaxially grown fully strained and partially relaxed n-type Si1-xGex layers
Authors: Mamor, M Nur, O Karlsteen, M Willander, M Auret, FD
Citation: M. Mamor et al., Fermi-level pinning and Schottky barrier heights on epitaxially grown fully strained and partially relaxed n-type Si1-xGex layers, J APPL PHYS, 86(12), 1999, pp. 6890-6894
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