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Results: 1-10 |
Results: 10
Thermal conductivity measurement in lead bromide
Authors: Singh, NB Coriell, SR Duval, WMB Mani, SS Green, K Glicksman, ME
Citation: Nb. Singh et al., Thermal conductivity measurement in lead bromide, J CRYST GR, 225(2-4), 2001, pp. 512-515
Xenopus rhodopsin promoter - Identification of immediate upstream sequences necessary for high level, rod-specific transcription
Authors: Mani, SS Batni, S Whitaker, L Chen, SM Engbretson, G Knox, BE
Citation: Ss. Mani et al., Xenopus rhodopsin promoter - Identification of immediate upstream sequences necessary for high level, rod-specific transcription, J BIOL CHEM, 276(39), 2001, pp. 36557-36565
Xenopus rod photoreceptor: Model for expression of retinal genes
Authors: Batni, S Mani, SS Schlueter, C Ji, M Knox, BE
Citation: S. Batni et al., Xenopus rod photoreceptor: Model for expression of retinal genes, METH ENZYM, 316, 2000, pp. 50-64
4H-SiC p-n diodes and gate turnoff thyristors for high-power, high-temperature applications
Authors: Agarwal, AK Seshadri, S MacMillan, M Mani, SS Casady, J Sanger, P Shah, P
Citation: Ak. Agarwal et al., 4H-SiC p-n diodes and gate turnoff thyristors for high-power, high-temperature applications, SOL ST ELEC, 44(2), 2000, pp. 303-308
Interface trap profile near the band edges at the 4H-SiC/SiO2 interface
Authors: Saks, NS Mani, SS Agarwal, AK
Citation: Ns. Saks et al., Interface trap profile near the band edges at the 4H-SiC/SiO2 interface, APPL PHYS L, 76(16), 2000, pp. 2250-2252
Low-dose nitrogen implants in 6H-silicon carbide
Authors: Saks, NS Agarwal, AK Mani, SS Hegde, VS
Citation: Ns. Saks et al., Low-dose nitrogen implants in 6H-silicon carbide, APPL PHYS L, 76(14), 2000, pp. 1896-1898
Investigation of microstructural coarsening in Sn-Pb alloys
Authors: Kailasam, SK Glicksman, ME Mani, SS Fradkov, VE
Citation: Sk. Kailasam et al., Investigation of microstructural coarsening in Sn-Pb alloys, MET MAT T A, 30(6), 1999, pp. 1541-1547
Status of SiC power devices at Northrop Grumman
Authors: Agarwal, AK Seshadri, S Casady, JB Mani, SS MacMillan, MF Saks, N Burk, AA Augustine, G Balakrishna, V Sanger, PA Brandt, CD Rodrigues, R
Citation: Ak. Agarwal et al., Status of SiC power devices at Northrop Grumman, DIAM RELAT, 8(2-5), 1999, pp. 295-301
A 475-V high-voltage 6H-SiC lateral MOSFET
Authors: Saks, NS Mani, SS Agarwal, AK Ancona, MG
Citation: Ns. Saks et al., A 475-V high-voltage 6H-SiC lateral MOSFET, IEEE ELEC D, 20(8), 1999, pp. 431-433
Immediate upstream sequence of arrestin directs rod-specific expression inXenopus
Authors: Mani, SS Besharse, JC Knox, BE
Citation: Ss. Mani et al., Immediate upstream sequence of arrestin directs rod-specific expression inXenopus, J BIOL CHEM, 274(22), 1999, pp. 15590-15597
Risultati: 1-10 |