Authors:
Manimaran, M
Vaya, PR
Basu, S
Sato, T
Kanayama, T
Citation: M. Manimaran et al., Fabrication and characterization of AlxGa1-xAs-GaAs based nanofabricated resonant tunneling light emitting diodes, SCR MATER, 44(8-9), 2001, pp. 1687-1693
Citation: M. Manimaran et al., Miniaturization of silicon nanopillars below 10 nm by NH4OH, KOH and HF wet chemical etching for light emission study, MATER LETT, 48(3-4), 2001, pp. 151-156
Citation: M. Manimaran et al., Electroluminescent device based on AlxGa1-xAs-GaAs quantum well nanostructures, OPT QUANT E, 32(10), 2000, pp. 1191-1199
Citation: M. Manimaran et al., Photon emission from the nanostructures of AlxGa1-xAs-GaAs produced by conventional lithographic and reactive ion-etching techniques, J LUMINESC, 87-9, 2000, pp. 1158-1161
Citation: M. Manimaran et Pr. Vaya, Realization of nanopillars on GaAs quantum well structure grown by molecular beam epitaxy, MICROELEC J, 30(9), 1999, pp. 899-903