Authors: Mao, AY Son, KA White, JM Kwong, DL Roberts, DA Vrtis, RN

Citation: Ay. Mao et al., Effects of vacuum and inert gas annealing of ultrathin tantalum pentoxide films on Si(100), J VAC SCI A, 17(3), 1999, pp. 954-960

Authors: Song, SC Luan, HF Lee, CH Mao, AY Lee, SJ Gelpey, J Marcus, S Kwong, DL

Citation: Sc. Song et al., Ultra thin high-quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si, MICROEL ENG, 48(1-4), 1999, pp. 55-58

Authors: Mao, AY Son, KA Hess, DA Brown, LA White, JM Kwong, DL Roberts, DA Vrtis, RN

Citation: Ay. Mao et al., Annealing ultra thin Ta2O5 films deposited on bare and nitrogen passivatedSi(100), THIN SOL FI, 349(1-2), 1999, pp. 230-237

Authors: Son, KA Mao, AY Hess, DA Brown, LA White, JM Kwong, DL Roberts, DA Vrtis, RN

Citation: Ka. Son et al., Deposition and annealing of ultrathin Ta2O5 films on nitrogen passivated Si(100), EL SOLID ST, 1(4), 1998, pp. 178-180