Authors:
Lerch, W
Gluck, M
Stolwijk, NA
Walk, H
Schafer, M
Marcus, SD
Downey, DF
Chow, JW
Citation: W. Lerch et al., Boron ultrashallow junction formation in silicon by low-energy implantation and rapid thermal annealing in inert and oxidizing ambient, J ELCHEM SO, 146(7), 1999, pp. 2670-2678
Citation: Df. Downey et al., Optimization of RTA parameters to produce ultra-shallow, highly activated B+, BF2+, and As+ ion implanted junctions, J ELEC MAT, 27(12), 1998, pp. 1296-1314