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Feuillet, G
Mariette, H
Mula, G
Pelekanos, N
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Adelmann, C
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Barjon, J
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Simon, J
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Authors:
Martinez-Guerrero, E
Daudin, B
Feuillet, G
Mariette, H
Genuist, Y
Fanget, S
Philippe, A
Dubois, C
Bru-Chevallier, C
Guillot, G
Nze, PA
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Monteil, Y
Gamez-Cuatzin, H
Tardy, J
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Authors:
Besombes, L
Kheng, K
Marsal, L
Mariette, H
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Authors:
Daudin, B
Feuillet, G
Mula, G
Mariette, H
Rouviere, JL
Pelekanos, N
Fishman, G
Adelmann, C
Simon, J
Citation: B. Daudin et al., Molecular beam epitaxy of GaN, AlN, InN and related alloys: from two- to three-dimensional growth mode, DIAM RELAT, 9(3-6), 2000, pp. 506-511
Authors:
Martinez-Guerrero, E
Adelmann, C
Chabuel, F
Simon, J
Pelekanos, NT
Mula, G
Daudin, B
Feuillet, G
Mariette, H
Citation: E. Martinez-guerrero et al., Self-assembled zinc blende GaN quantum dots grown by molecular-beam epitaxy, APPL PHYS L, 77(6), 2000, pp. 809-811
Authors:
Martinez-Guerrero, E
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Jalabert, D
Daudin, B
Feuillet, G
Mariette, H
Aboughe-Nze, P
Monteil, Y
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Authors:
Adelmann, C
Langer, R
Martinez-Guerrero, E
Mariette, H
Feuillet, G
Daudin, B
Citation: C. Adelmann et al., Indium-modified growth kinetics of cubic and hexagonal GaN in molecular beam epitaxy, J APPL PHYS, 86(8), 1999, pp. 4322-4325
Authors:
Arlery, M
Rouviere, JL
Widmann, F
Daudin, B
Feuillet, G
Mariette, H
Citation: M. Arlery et al., Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy, APPL PHYS L, 74(22), 1999, pp. 3287-3289