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Results:
1-5
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Results: 5
Compensation origins in II-VICZT materials
Authors:
Zumbiehl, A Mergui, S Ayoub, M Hage-Ali, M Zerrai, A Cherkaoui, K Marrakchi, G Darici, Y
Citation:
A. Zumbiehl et al., Compensation origins in II-VICZT materials, MAT SCI E B, 71, 2000, pp. 297-300
Electrical and optical characteristics of deep levels in vanadium-doped Cd0.96Zn0.04Te materials by photoinduced current, capacitance, and photocapacitance transient spectroscopies
Authors:
Zerrai, A Marrakchi, G Bremond, G
Citation:
A. Zerrai et al., Electrical and optical characteristics of deep levels in vanadium-doped Cd0.96Zn0.04Te materials by photoinduced current, capacitance, and photocapacitance transient spectroscopies, J APPL PHYS, 87(9), 2000, pp. 4293-4302
Influence of deep levels on CdZnTe nuclear detectors
Authors:
Zerrai, A Cherkaoui, K Marrakchi, G Bremond, G Fougeres, P Hage-Ali, M Koebel, JM Siffert, P
Citation:
A. Zerrai et al., Influence of deep levels on CdZnTe nuclear detectors, J CRYST GR, 197(3), 1999, pp. 646-649
Resistivity simulation of CZT materials
Authors:
Zumbiehl, A Fougeres, P Hage-Ali, M Koebel, JM Siffert, P Zerrai, A Cherkaoui, K Marrakchi, G Bremond, G
Citation:
A. Zumbiehl et al., Resistivity simulation of CZT materials, J CRYST GR, 197(3), 1999, pp. 670-674
Investigation of deep levels in vanadium-doped CdTe and CdZnTe
Authors:
Zerrai, A Dammak, M Marrakchi, G Bremond, G Triboulet, R Marfaing, Y
Citation:
A. Zerrai et al., Investigation of deep levels in vanadium-doped CdTe and CdZnTe, J CRYST GR, 197(3), 1999, pp. 729-732
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