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Results:
1-12
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Results: 12
Authors:
Martinez, FL
del Prado, A
Martil, I
Gonzalez-Diaz, G
Kliefoth, K
Fussel, W
Citation: Fl. Martinez et al., Electrical properties of rapid thermally annealed SiNx : H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy, SEMIC SCI T, 16(7), 2001, pp. 534-542
Authors:
Marcos, B
Ibanez, J
Cusco, R
Martinez, FL
Gonzalez-Diaz, G
Artus, L
Citation: B. Marcos et al., Lattice recovery by rapid thermal annealing in Mg+-implanted InP assessed by Raman spectroscopy, NUCL INST B, 175, 2001, pp. 252-256
Authors:
Martinez, FL
del Prado, A
Martil, I
Gonzalez-Diaz, G
Bohne, W
Fuhs, W
Rohrich, J
Selle, B
Sieber, I
Citation: Fl. Martinez et al., Molecular models and activation energies for bonding rearrangement in plasma-deposited alpha-SiNx : H dielectric thin films treated by rapid thermal annealing - art. no. 245320, PHYS REV B, 6324(24), 2001, pp. 5320
Authors:
Martinez, FL
San Andres, E
del Prado, A
Martil, I
Bravo, D
Lopez, FJ
Citation: Fl. Martinez et al., Temperature effects on the electrical properties and structure of interfacial and bulk defects in Al/SiNx : H/Si devices, J APPL PHYS, 90(3), 2001, pp. 1573-1581
Authors:
Bohne, W
Fuhs, W
Rohrich, J
Selle, B
Gonzalez-Diaz, G
Martil, I
Martinez, FL
del Prado, A
Citation: W. Bohne et al., Compositional analysis of amorphous SiNx : H films by ERDA and infrared spectroscopy, SURF INT AN, 30(1), 2000, pp. 534-537
Authors:
Martinez, FL
del Prado, A
Martil, I
Bravo, D
Lopez, FJ
Citation: Fl. Martinez et al., Defect structure of SiNx : H films and its evolution with annealing temperature, J APPL PHYS, 88(4), 2000, pp. 2149-2151
Authors:
San Andres, E
del Prado, A
Martinez, FL
Martil, I
Bravo, D
Lopez, FJ
Citation: E. San Andres et al., Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx : H films deposited by electron cyclotron resonance, J APPL PHYS, 87(3), 2000, pp. 1187-1192
Authors:
del Prado, A
Martinez, FL
Martil, I
Gonzalez-Diaz, G
Fernandez, M
Citation: A. Del Prado et al., Effect of substrate temperature in SiOxNy films deposited by electron cyclotron resonance, J VAC SCI A, 17(4), 1999, pp. 1263-1268
Authors:
Martinez, FL
del Prado, A
Bravo, D
Lopez, F
Martil, I
Gonzalez-Diaz, G
Citation: Fl. Martinez et al., Thermal stability of a-SiNx : H films deposited by plasma electron cyclotron resonance, J VAC SCI A, 17(4), 1999, pp. 1280-1284
Authors:
Strass, A
Bieringer, P
Hansch, W
Fuenzalida, V
Alvarez, A
Luna, J
Martil, I
Martinez, FL
Eisele, I
Citation: A. Strass et al., Fabrication and characterisation of thin low-temperature MBE-compatible silicon oxides of different stoichiometry, THIN SOL FI, 349(1-2), 1999, pp. 135-146
Authors:
Martinez, FL
Martil, I
Gonzalez-Diaz, G
Bernal-Oliva, AM
Gonzalez-Leal, JM
Marquez, E
Citation: Fl. Martinez et al., Optical absorption in amorphous hydrogenated silicon nitride thin films deposited by the electron cyclotron resonance plasma method and subjected to rapid thermal annealing, THIN SOL FI, 344, 1999, pp. 433-436
Authors:
Martinez, FL
del Prado, A
Martil, I
Gonzalez-Diaz, G
Selle, B
Sieber, I
Citation: Fl. Martinez et al., Thermally induced changes in the optical properties of SiNx : H films deposited by the electron cyclotron resonance plasma method, J APPL PHYS, 86(4), 1999, pp. 2055-2061
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