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Results:
1-8
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Results: 8
Authors:
Guiot, E
Benayoun, S
Nouet, G
Djouadi, M
Masri, P
Lambertin, M
Citation: E. Guiot et al., Formation and growth of c-BN films in various conditions: improvement of the adherence, DIAM RELAT, 10(3-7), 2001, pp. 1357-1362
Authors:
Masri, P
Laridjani, MR
Breton, O
Averous, M
Citation: P. Masri et al., Evaluation of SiC as a substrate material for nitride materials heteroepitaxy, MAT SCI E B, 82(1-3), 2001, pp. 53-55
Authors:
Masri, P
Stauden, T
Pezoldt, J
Averous, M
Citation: P. Masri et al., Elasticity-based approach of interfaces: Application to heteroepitaxy and hetero-systems, PHYS ST S-A, 187(2), 2001, pp. 439-469
Authors:
Pezoldt, J
Schroter, B
Cimalla, V
Masri, P
Citation: J. Pezoldt et al., The influence of surface preparation on the properties of SiC on Si(111), PHYS ST S-A, 185(1), 2001, pp. 159-166
Authors:
Masri, P
Mortet, V
Laridjani, MR
Averous, M
Citation: P. Masri et al., Physics of epitaxy and c-BN films optimized growth, COMP MAT SC, 17(2-4), 2000, pp. 520-524
Authors:
Masri, P
Laridjani, MR
Wohner, T
Pezoldt, J
Averous, M
Citation: P. Masri et al., Optimization of 3C-SiC/Si heterointerfaces in epitaxial growth, COMP MAT SC, 17(2-4), 2000, pp. 544-550
Authors:
Marinelli, F
Masri, P
Lichanot, A
Citation: F. Marinelli et al., Ab initio calculations of elastic properties and electronic structure of calcium selenide, J PHYS CH S, 61(4), 2000, pp. 603-608
Authors:
Masri, P
Moreaud, N
Laridjani, MR
Calas, J
Averous, M
Chaix, G
Dollet, A
Berjoan, R
Dupuy, C
Citation: P. Masri et al., The physics of heteroepitaxy of 3C-SiC on Si: role of Ge in the optimization of the 3C-SiC/Si heterointerface, MAT SCI E B, 61-2, 1999, pp. 535-538
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