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Citation: P. Palestri et al., Monte Carlo simulation of impact ionization in SiGeHBTs, IEEE ELEC D, 22(11), 2001, pp. 533-535

Authors: Mastrapasqua, M Esseni, D Celler, GK Fiegna, C Selmi, L Sangiorgi, E

Citation: M. Mastrapasqua et al., Measurements of low field mobility in ultra-thin SOI n- and p-MOSFETs, MICROEL ENG, 59(1-4), 2001, pp. 409-416

Authors: Pacelli, A Mastrapasqua, M Luryi, S

Citation: A. Pacelli et al., Generation of equivalent circuits from physics-based device simulation, IEEE COMP A, 19(11), 2000, pp. 1241-1250

Authors: Ghetti, A Liu, CT Mastrapasqua, M Sangiorgi, E

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Authors: Pavesi, M Selmi, L Manfredi, M Sangiorgi, E Mastrapasqua, M Bude, JD

Citation: M. Pavesi et al., Evidence of substrate enhanced high-energy tails in the distribution function of deep submicron MOSFET's by light emission measurements, IEEE ELEC D, 20(11), 1999, pp. 595-597

Authors: Mastrapasqua, M

Citation: M. Mastrapasqua, Low voltage flash memory by use of a substrate bias, MICROEL ENG, 48(1-4), 1999, pp. 389-394