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Results: 1-4 |
Results: 4

Authors: Ortiz, C Mathiot, D Alquier, D Dubois, C Jerisian, R
Citation: C. Ortiz et al., Trapping of aluminium by dislocation loops in Si, NUCL INST B, 178, 2001, pp. 188-191

Authors: Ortiz, C Mathiot, D Dubois, C Jerisian, R
Citation: C. Ortiz et al., Diffusion of low-dose implanted aluminum in silicon in inert and dry O-2 ambient, J APPL PHYS, 87(5), 2000, pp. 2661-2663

Authors: Claverie, A Giles, LF Omri, M de Mauduit, B Ben Assayag, G Mathiot, D
Citation: A. Claverie et al., Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion, NUCL INST B, 147(1-4), 1999, pp. 1-12

Authors: Ortiz, C Grob, JJ Mathiot, D Claverie, A Dubois, C Jerisian, R
Citation: C. Ortiz et al., Thermal redistribution of Al implanted in Si: evidences for interactions with extended defects, NUCL INST B, 147(1-4), 1999, pp. 122-126
Risultati: 1-4 |