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Results: 1-25/46
Authors:
Nagai, Y
Kunimoto, T
Nagasaka, K
Nojri, H
Motokawa, M
Matsukura, F
Dietl, T
Ohno, H
Citation: Y. Nagai et al., Spin polarization dependent far infrared absorption in Ga1-xMnxAs, JPN J A P 1, 40(11), 2001, pp. 6231-6234
Authors:
Adachi, T
Ohno, Y
Matsukura, F
Ohno, H
Citation: T. Adachi et al., Spin relaxation in n-modulation doped GaAs/AlGaAs (110) quantum wells, PHYSICA E, 10(1-3), 2001, pp. 36-39
Authors:
Fukumura, T
Shono, T
Inaba, K
Hasegawa, T
Koinuma, H
Matsukura, F
Ohno, H
Citation: T. Fukumura et al., Magnetic domain structure of a ferromagnetic semiconductor (Ga,Mn)As observed with scanning probe microscopes, PHYSICA E, 10(1-3), 2001, pp. 135-138
Authors:
Omiya, T
Matsukura, F
Shen, A
Ohno, Y
Ohno, H
Citation: T. Omiya et al., Magnetotransport properties of (Ga,Mn)As grown on GaAs(411)A substrates, PHYSICA E, 10(1-3), 2001, pp. 206-209
Authors:
Ueda, S
Imada, S
Muro, T
Saitoh, Y
Suga, S
Matsukura, F
Ohno, H
Citation: S. Ueda et al., Magnetic circular dichroism in Mn 2p core absorption of Ga1-xMnxAs, PHYSICA E, 10(1-3), 2001, pp. 210-214
Authors:
Chiba, D
Akiba, N
Matsukura, F
Ohno, Y
Ohno, H
Citation: D. Chiba et al., Properties of (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As magnetic trilayer structures, PHYSICA E, 10(1-3), 2001, pp. 278-282
Authors:
Arata, I
Ohno, Y
Matsukura, F
Ohno, H
Citation: I. Arata et al., Temperature dependence of electroluminescence and I-V characteristics of ferromagnetic/non-magnetic semiconductor pn junctions, PHYSICA E, 10(1-3), 2001, pp. 288-291
Authors:
Ohno, Y
Arata, I
Matsukura, F
Ohno, H
Young, DK
Beschoten, B
Awschalom, DD
Citation: Y. Ohno et al., Electrical spin injection in ferromagnetic/nonmagnetic semiconductor heterostructures, PHYSICA E, 10(1-3), 2001, pp. 489-492
Authors:
Ohno, H
Matsukura, F
Ohno, Y
Citation: H. Ohno et al., Spin-dependent properties of ferromagnetic/nonmagnetic GaAs heterostructures, MAT SCI E B, 84(1-2), 2001, pp. 70-74
Authors:
Dietl, T
Ohno, H
Matsukura, F
Citation: T. Dietl et al., Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors -art. no. 195205, PHYS REV B, 6319(19), 2001, pp. 5205
Authors:
Ohno, H
Matsukura, F
Ohno, Y
Citation: H. Ohno et al., Spin-dependent phenomena in ferromagnetic/nonmagnetic III-V heterostructures, SOL ST COMM, 119(4-5), 2001, pp. 281-289
Authors:
Ohno, H
Matsukura, F
Citation: H. Ohno et F. Matsukura, A ferromagnetic III-V semiconductor: (Ga,Mn)As, SOL ST COMM, 117(3), 2001, pp. 179-186
Authors:
Takamura, K
Matsukura, F
Ohno, Y
Ohno, H
Citation: K. Takamura et al., Growth and properties of (Ga,Mn)As films with high Mn concentration, J APPL PHYS, 89(11), 2001, pp. 7024-7026
Authors:
Ofuchi, H
Kubo, T
Tabuchi, M
Takeda, Y
Matsukura, F
Guo, SP
Shen, A
Ohno, H
Citation: H. Ofuchi et al., Fluorescence extended x-ray absorption fine structure study on local structures around Mn atoms in thin (In, Mn)As layer and (In, Mn)As quantum dots, J APPL PHYS, 89(1), 2001, pp. 66-70
Authors:
Zhao, JH
Matsukura, F
Takamura, K
Abe, E
Chiba, D
Ohno, H
Citation: Jh. Zhao et al., Room-temperature ferromagnetism in zincblende CrSb grown by molecular-beamepitaxy, APPL PHYS L, 79(17), 2001, pp. 2776-2778
Authors:
Shono, T
Fukumura, T
Kawasaki, M
Koinuma, H
Hasegawa, T
Endo, T
Kitazawa, K
Matsukura, F
Ohno, H
Citation: T. Shono et al., Magnetic domain structures of (Ga,Mn)As investigated by scanning Hall probe microscopy, PHYSICA B, 284, 2000, pp. 1171-1172
Authors:
Yang, JR
Yasuda, H
Wang, SL
Matsukura, F
Ohno, Y
Ohno, H
Citation: Jr. Yang et al., Surface morphologies of III-V based magnetic semiconductor (Ga,Mn) As grown by molecular beam epitaxy, APPL SURF S, 166(1-4), 2000, pp. 242-246
Authors:
Yasuda, H
Matsukura, F
Ohno, Y
Ohno, H
Citation: H. Yasuda et al., Arsenic flux dependence of InAs nanostructure formation on GaAs (211) B surface, APPL SURF S, 166(1-4), 2000, pp. 413-417
Authors:
Matsukura, F
Abe, E
Ohno, Y
Ohno, H
Citation: F. Matsukura et al., Molecular beam epitaxy of GaSb with high concentration of Mn, APPL SURF S, 159, 2000, pp. 265-269
Authors:
Ohno, Y
Arata, I
Matsukura, F
Ohtani, K
Wang, S
Ohno, H
Citation: Y. Ohno et al., MBE growth and electroluminescence of ferromagnetic/non-magnetic semiconductor pn junctions based on (Ga,Mn) As, APPL SURF S, 159, 2000, pp. 308-312
Authors:
Ohtani, K
Sato, A
Ohno, Y
Matsukura, F
Ohno, H
Citation: K. Ohtani et al., Influence of interface bonds and buffer materials on optical properties ofInAs/AlSb quantum wells grown on GaAs substrates, APPL SURF S, 159, 2000, pp. 313-317
Authors:
Dietl, T
Ohno, H
Matsukura, F
Cibert, J
Ferrand, D
Citation: T. Dietl et al., Zener model description of ferromagnetism in zinc-blende magnetic semiconductors, SCIENCE, 287(5455), 2000, pp. 1019-1022
Authors:
Ohno, H
Chiba, D
Matsukura, F
Omiya, T
Abe, E
Dietl, T
Ohno, Y
Ohtani, K
Citation: H. Ohno et al., Electric-field control of ferromagnetism, NATURE, 408(6815), 2000, pp. 944-946
Authors:
Guo, SP
Shen, A
Yasuda, H
Ohno, Y
Matsukura, F
Ohno, H
Citation: Sp. Guo et al., Surfactant effect of Mn on the formation of self-organized InAs nanostructures, J CRYST GR, 208(1-4), 2000, pp. 799-803
Authors:
Akiba, N
Chiba, D
Nakata, K
Matsukura, F
Ohno, Y
Ohno, H
Citation: N. Akiba et al., Spin-dependent scattering in semiconducting ferromagnetic (Ga,Mn)As trilayer structures, J APPL PHYS, 87(9), 2000, pp. 6436-6438