Authors:
Sadowski, J
Mathieu, R
Svedlindh, P
Karlsteen, M
Kanski, J
Ilver, L
Asklund, H
Swiatek, K
Domagala, JZ
Bak-Misiuk, J
Maude, D
Citation: J. Sadowski et al., Properties of GaMnAs layers grown by migration enhanced epitaxy at very low substrate temperatures, PHYSICA E, 10(1-3), 2001, pp. 181-185
Authors:
Frayssinet, E
Knap, W
Lorenzini, P
Grandjean, N
Massies, J
Skierbiszewski, C
Suski, T
Grzegory, I
Porowski, S
Simin, G
Hu, X
Khan, MA
Shur, MS
Gaska, R
Maude, D
Citation: E. Frayssinet et al., High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates, APPL PHYS L, 77(16), 2000, pp. 2551-2553
Authors:
Knap, W
Frayssinet, E
Skierbiszewski, C
Chaubet, C
Sadowski, ML
Maude, D
Khan, MA
Shur, MS
Citation: W. Knap et al., Conduction band energy spectrum of two-dimensional electrons in GaN/AlGaN heterojunctions, PHYS ST S-B, 216(1), 1999, pp. 719-725