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Results: 26-35/35

Authors: Kovsh, AR Zhukov, AE Egorov, AY Ustinov, VM Shernyakov, YM Maximov, MV Volovik, VV Tsatsul'nikov, AF Musikhin, YV Ledentsov, NN Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Ar. Kovsh et al., Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasers, J CRYST GR, 202, 1999, pp. 1117-1120

Authors: Ustinov, VM Egorov, AY Zhukov, AE Kovsh, AR Ledentsov, NN Maximov, MV Volovik, BV Tsatsul'nikov, AF Kop'ev, PS Alferov, ZI Soshnikov, IP Zakharov, N Werner, P Bimberg, D
Citation: Vm. Ustinov et al., 1.75 mu m emission from self-organized InAs quantum dots on GaAs, J CRYST GR, 202, 1999, pp. 1143-1145

Authors: Maximov, MV Shernyakov, YM Kaiander, IN Bedarev, DA Kondrat'eva, EY Kop'ev, PS Kovsh, AR Maleev, NA Mikhrin, SS Tsatsul'nikov, AF Ustinov, VM Volovik, BV Zhukov, AE Alferov, ZJ Ledentsov, NN Bimberg, D
Citation: Mv. Maximov et al., Single transverse mode operation of long wavelength (similar to 1.3 mu m) InAsGaAs quantum dot laser, ELECTR LETT, 35(23), 1999, pp. 2038-2039

Authors: Zhukov, AE Kovsh, AR Mikhrin, SS Maleev, NA Ustinov, VM Livshits, DA Tarasov, IS Bedarev, DA Maximov, MV Tsatsul'nikov, AF Soshnikov, IP Kop'ev, PS Alferov, ZI Ledentsov, NN Bimberg, D
Citation: Ae. Zhukov et al., 3.9W CW power from sub-monolayer quantum dot diode laser, ELECTR LETT, 35(21), 1999, pp. 1845-1847

Authors: Kovsh, AR Zhukov, AE Livshits, DA Egorov, AY Ustinov, VM Maximov, MV Musikhin, YG Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Ar. Kovsh et al., 3.5W CW operation of quantum dot laser, ELECTR LETT, 35(14), 1999, pp. 1161-1163

Authors: Shernyakov, YM Bedarev, DA Kondrat'eva, EY Kop'ev, PS Kovsh, AR Maleev, NA Maximov, MV Mikhrin, SS Tsatsul'nikov, AF Ustinov, VM Volovik, BV Zhukov, AE Alferov, ZI Ledentsov, NN Bimberg, D
Citation: Ym. Shernyakov et al., 1.3 mu m GaAs-based laser using quantum dots obtained by activated spinodal decomposition, ELECTR LETT, 35(11), 1999, pp. 898-900

Authors: Maximov, MV Tsatsul'nikov, AF Volovik, BV Bedarev, DA Egorov, AY Zhukov, AE Kovsh, AR Bert, NA Ustinov, VM Kop'ev, PS Alferov, ZI Ledentsov, NN Bimberg, D Soshnikov, IP Werner, P
Citation: Mv. Maximov et al., Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 mu m, APPL PHYS L, 75(16), 1999, pp. 2347-2349

Authors: Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Ustinov, VM Tsatsul'nikov, AF Maximov, MV Volovik, BV Bedarev, DA Shernyakov, YM Kop'ev, PS Alferov, ZI Ledentsov, NN Bimberg, D
Citation: Ae. Zhukov et al., Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates, APPL PHYS L, 75(13), 1999, pp. 1926-1928

Authors: Ledentsov, NN Tsatsul'nikov, AF Egorov, AY Kop'ev, PS Kovsh, AR Maximov, MV Ustinov, VM Volovik, BV Zhukov, AE Alferov, AI
Citation: Nn. Ledentsov et al., Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer superlattices, APPL PHYS L, 74(2), 1999, pp. 161-163

Authors: Heitz, R Ledentsov, NN Bimberg, D Egorov, AY Maximov, MV Ustinov, VM Zhukov, AE Alferov, ZI Cirlin, GE Soshnikov, IP Zakharov, ND Werner, P Gosele, U
Citation: R. Heitz et al., Optical properties of InAs quantum dots in a Si matrix, APPL PHYS L, 74(12), 1999, pp. 1701-1703
Risultati: 1-25 | 26-35 |