Authors:
Kovsh, AR
Zhukov, AE
Egorov, AY
Ustinov, VM
Shernyakov, YM
Maximov, MV
Volovik, VV
Tsatsul'nikov, AF
Musikhin, YV
Ledentsov, NN
Kop'ev, PS
Bimberg, D
Alferov, ZI
Citation: Ar. Kovsh et al., Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasers, J CRYST GR, 202, 1999, pp. 1117-1120
Authors:
Ustinov, VM
Egorov, AY
Zhukov, AE
Kovsh, AR
Ledentsov, NN
Maximov, MV
Volovik, BV
Tsatsul'nikov, AF
Kop'ev, PS
Alferov, ZI
Soshnikov, IP
Zakharov, N
Werner, P
Bimberg, D
Citation: Vm. Ustinov et al., 1.75 mu m emission from self-organized InAs quantum dots on GaAs, J CRYST GR, 202, 1999, pp. 1143-1145
Authors:
Maximov, MV
Shernyakov, YM
Kaiander, IN
Bedarev, DA
Kondrat'eva, EY
Kop'ev, PS
Kovsh, AR
Maleev, NA
Mikhrin, SS
Tsatsul'nikov, AF
Ustinov, VM
Volovik, BV
Zhukov, AE
Alferov, ZJ
Ledentsov, NN
Bimberg, D
Citation: Mv. Maximov et al., Single transverse mode operation of long wavelength (similar to 1.3 mu m) InAsGaAs quantum dot laser, ELECTR LETT, 35(23), 1999, pp. 2038-2039
Authors:
Zhukov, AE
Kovsh, AR
Mikhrin, SS
Maleev, NA
Ustinov, VM
Livshits, DA
Tarasov, IS
Bedarev, DA
Maximov, MV
Tsatsul'nikov, AF
Soshnikov, IP
Kop'ev, PS
Alferov, ZI
Ledentsov, NN
Bimberg, D
Citation: Ae. Zhukov et al., 3.9W CW power from sub-monolayer quantum dot diode laser, ELECTR LETT, 35(21), 1999, pp. 1845-1847
Authors:
Shernyakov, YM
Bedarev, DA
Kondrat'eva, EY
Kop'ev, PS
Kovsh, AR
Maleev, NA
Maximov, MV
Mikhrin, SS
Tsatsul'nikov, AF
Ustinov, VM
Volovik, BV
Zhukov, AE
Alferov, ZI
Ledentsov, NN
Bimberg, D
Citation: Ym. Shernyakov et al., 1.3 mu m GaAs-based laser using quantum dots obtained by activated spinodal decomposition, ELECTR LETT, 35(11), 1999, pp. 898-900
Authors:
Maximov, MV
Tsatsul'nikov, AF
Volovik, BV
Bedarev, DA
Egorov, AY
Zhukov, AE
Kovsh, AR
Bert, NA
Ustinov, VM
Kop'ev, PS
Alferov, ZI
Ledentsov, NN
Bimberg, D
Soshnikov, IP
Werner, P
Citation: Mv. Maximov et al., Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 mu m, APPL PHYS L, 75(16), 1999, pp. 2347-2349
Authors:
Zhukov, AE
Kovsh, AR
Maleev, NA
Mikhrin, SS
Ustinov, VM
Tsatsul'nikov, AF
Maximov, MV
Volovik, BV
Bedarev, DA
Shernyakov, YM
Kop'ev, PS
Alferov, ZI
Ledentsov, NN
Bimberg, D
Citation: Ae. Zhukov et al., Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates, APPL PHYS L, 75(13), 1999, pp. 1926-1928
Authors:
Ledentsov, NN
Tsatsul'nikov, AF
Egorov, AY
Kop'ev, PS
Kovsh, AR
Maximov, MV
Ustinov, VM
Volovik, BV
Zhukov, AE
Alferov, AI
Citation: Nn. Ledentsov et al., Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer superlattices, APPL PHYS L, 74(2), 1999, pp. 161-163
Authors:
Heitz, R
Ledentsov, NN
Bimberg, D
Egorov, AY
Maximov, MV
Ustinov, VM
Zhukov, AE
Alferov, ZI
Cirlin, GE
Soshnikov, IP
Zakharov, ND
Werner, P
Gosele, U
Citation: R. Heitz et al., Optical properties of InAs quantum dots in a Si matrix, APPL PHYS L, 74(12), 1999, pp. 1701-1703