AAAAAA
Results:
1-8
|
Results: 8
Authors:
Los, AV
Mazzola, MS
Citation: Av. Los et Ms. Mazzola, Influence of carrier freeze-out on SiC Schottky junction admittance, J ELEC MAT, 30(3), 2001, pp. 235-241
Authors:
Sankin, I
Casady, JB
Dufrene, JB
Draper, WA
Kretchmer, J
Vandersand, J
Kumar, V
Mazzola, MS
Saddow, SE
Citation: I. Sankin et al., On development of 6H-SiC LDMOS transistors using silane-ambient implant anneal, SOL ST ELEC, 45(9), 2001, pp. 1653-1657
Authors:
Younan, NH
Lee, HS
Mazzola, MS
Citation: Nh. Younan et al., Estimating the model parameters of deep-level transient spectroscopy data using a combined wavelet/singular value decomposition Prony method, REV SCI INS, 72(3), 2001, pp. 1800-1805
Authors:
Los, AV
Mazzola, MS
Citation: Av. Los et Ms. Mazzola, Semiconductor impurity parameter determination from Schottky junction thermal admittance spectroscopy, J APPL PHYS, 89(7), 2001, pp. 3999-4003
Authors:
Mazzola, MS
Citation: Ms. Mazzola, Consumers last, IEEE SPECTR, 38(8), 2001, pp. 10-10
Authors:
Koshka, Y
Mazzola, MS
Citation: Y. Koshka et Ms. Mazzola, Effect of hydrogenation on Al-related photoluminescence in 6H-SiC, APPL PHYS L, 79(6), 2001, pp. 752-754
Authors:
Mazzola, MS
Saddow, SE
Schoner, A
Citation: Ms. Mazzola et al., Close compensation of 6H and 4H silicon carbide by silicon-to-carbon ratiocontrol, MAT SCI E B, 61-2, 1999, pp. 155-157
Authors:
Saddow, SE
Mazzola, MS
Rendakova, SV
Dmitriev, VA
Citation: Se. Saddow et al., Silicon carbide CVD homoepitaxy on wafers with reduced micropipe density, MAT SCI E B, 61-2, 1999, pp. 158-160
Risultati:
1-8
|