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Results: 1-3 |
Results: 3
Investigation of carbon-doped base materials grown by CBE for Al-free InPHBTs
Authors: Benchimol, JL Mba, J Sermage, B Riet, M Blayac, S Berdaguer, P Duchenois, AM Andre, P Thuret, J Gonzalez, C Konczykowska, A
Citation: Jl. Benchimol et al., Investigation of carbon-doped base materials grown by CBE for Al-free InPHBTs, J CRYST GR, 209(2-3), 2000, pp. 476-480
Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors
Authors: Danelon, V Aniel, F Benchimol, JL Mba, J Riet, M Crozat, P Vernet, G Adde, R
Citation: V. Danelon et al., Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors, IEEE MICR G, 9(5), 1999, pp. 195-197
Low damage dry etching of III-V materials for heterojunction bipolar transistor applications using a chlorinated inductively coupled plasma
Authors: Etrillard, J Bresse, JF Daguet, C Riet, M Mba, J
Citation: J. Etrillard et al., Low damage dry etching of III-V materials for heterojunction bipolar transistor applications using a chlorinated inductively coupled plasma, J VAC SCI A, 17(4), 1999, pp. 1174-1181
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