Authors: Starikov, D Berishev, I Um, JW Badi, N Medelci, N Tempez, A Bensaoula, A

Citation: D. Starikov et al., Diode structures based on p-GaN for optoelectronic applications in the near-ultraviolet range of the spectrum, J VAC SCI B, 18(6), 2000, pp. 2620-2623

Authors: Kim, E Tempez, A Medelci, N Berishev, I Bensaoula, A

Citation: E. Kim et al., Selective area growth of GaN on Si(111) by chemical beam epitaxy, J VAC SCI A, 18(4), 2000, pp. 1130-1134

Authors: Medelci, N Tempez, A Starikov, D Badi, N Berishev, I Bensaoula, A

Citation: N. Medelci et al., Etch characteristics of GaN and BN materials in chlorine-based plasmas, J ELEC MAT, 29(9), 2000, pp. 1079-1083

Authors: Tempez, A Medelci, N Badi, N Berishev, I Starikov, D Bensaoula, A

Citation: A. Tempez et al., Photoenhanced reactive ion etching of III-V nitrides in BCl3/Cl-2/Ar/N-2 plasmas, J VAC SCI A, 17(4), 1999, pp. 2209-2213

Authors: Starikov, D Badi, N Berishev, I Medelci, N Kameli, O Sayhi, M Zomorrodian, V Bensaoula, A

Citation: D. Starikov et al., Metal-insulator-semiconductor Schottky barrier structures fabricated usinginterfacial BN layers grown on GaN and SiC for optoelectronic device applications, J VAC SCI A, 17(4), 1999, pp. 1235-1238