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Results: 1-10 |
Results: 10
Low voltage and temperature effects on SILC in stressed ultrathin oxide films
Authors: Meinertzhagen, A Zander, D Petit, C Jourdain, M Gogenheim, D
Citation: A. Meinertzhagen et al., Low voltage and temperature effects on SILC in stressed ultrathin oxide films, SOL ST ELEC, 45(8), 2001, pp. 1371-1381
Creation and thermal annealing of interface states induced by uniform or localized injection in 2.3nm thick oxides.
Authors: Zander, D Saigne, F Meinertzhagen, A
Citation: D. Zander et al., Creation and thermal annealing of interface states induced by uniform or localized injection in 2.3nm thick oxides., MICROEL REL, 41(9-10), 2001, pp. 1355-1360
High field stress at and above room temperature in 2.3 nm thick oxides
Authors: Zander, D Petit, C Saigne, F Meinertzhagen, A
Citation: D. Zander et al., High field stress at and above room temperature in 2.3 nm thick oxides, MICROEL REL, 41(7), 2001, pp. 1023-1026
Electrical stress effects on ultrathin (2.3 nm) oxides
Authors: Zander, D Saigne, F Petit, C Meinertzhagen, A
Citation: D. Zander et al., Electrical stress effects on ultrathin (2.3 nm) oxides, J NON-CRYST, 280(1-3), 2001, pp. 86-91
Anode hole injection and stress induced leakage current decay in metal-oxide-semiconductor capacitors
Authors: Meinertzhagen, A Petit, C Jourdain, M Mondon, F
Citation: A. Meinertzhagen et al., Anode hole injection and stress induced leakage current decay in metal-oxide-semiconductor capacitors, SOL ST ELEC, 44(4), 2000, pp. 623-630
On stress induced leakage current in 5 and 3 nm thick oxides
Authors: Meinertzhagen, A Zander, D Petit, C Jourdain, M Gogenheim, D
Citation: A. Meinertzhagen et al., On stress induced leakage current in 5 and 3 nm thick oxides, MICROEL REL, 40(4-5), 2000, pp. 711-714
Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides
Authors: Goguenheim, D Bravaix, A Vuillaume, D Mondon, F Candelier, P Jourdain, M Meinertzhagen, A
Citation: D. Goguenheim et al., Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides, MICROEL REL, 39(2), 1999, pp. 165-169
On positive charge annihilation and stress-induced leakage current decrease
Authors: Meinertzhagen, A Petit, C Jourdain, M Mondon, F Gogenheim, D
Citation: A. Meinertzhagen et al., On positive charge annihilation and stress-induced leakage current decrease, MICROEL REL, 39(2), 1999, pp. 191-196
Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections
Authors: Goguenheim, A Bravaix, A Vuillaume, D Mondon, F Jourdain, M Meinertzhagen, A
Citation: A. Goguenheim et al., Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections, J NON-CRYST, 245, 1999, pp. 41-47
Stress-induced leakage current reduction by a low field of opposite polarity to the stress field
Authors: Meinertzhagen, A Petit, C Jourdain, M Mondon, F
Citation: A. Meinertzhagen et al., Stress-induced leakage current reduction by a low field of opposite polarity to the stress field, J APPL PHYS, 84(9), 1998, pp. 5070-5079
Risultati: 1-10 |