Authors: Crupi, I Lombardo, S Spinella, C Gerardi, C Fazio, B Vulpio, M Melanotte, M Liao, YG Bongiorno, C

Citation: I. Crupi et al., Memory effects in MOS capacitors with silicon quantum dots, MAT SCI E C, 15(1-2), 2001, pp. 283-285

Authors: Gerardi, C Melanotte, M Crivelli, B Zonca, R Alessandri, M

Citation: C. Gerardi et al., Nitridation of gate and tunnel oxides employed in CMOS-ULSI technology, MICRON, 31(3), 2000, pp. 291-297

Authors: Gerardi, C Melanotte, M Lombardo, S Alessandri, M Crivelli, B Zonca, R

Citation: C. Gerardi et al., Effects of nitridation by nitric oxide on the leakage current of thin SiO2gate oxides, J APPL PHYS, 87(1), 2000, pp. 498-501