AAAAAA

   
Results: 1-8 |
Results: 8
Wet chemical etching of GaN in H3PO4 with Al ions
Authors: Mynbaeva, MG Melnik, YV Kryganovskii, AK Mynbaev, KD
Citation: Mg. Mynbaeva et al., Wet chemical etching of GaN in H3PO4 with Al ions, EL SOLID ST, 2(8), 1999, pp. 404-406
Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy
Authors: Zubrilov, AS Melnik, YV Nikolaev, AE Jacobson, MA Nelson, DK Dmitriev, VA
Citation: As. Zubrilov et al., Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy, SEMICONDUCT, 33(10), 1999, pp. 1067-1071
Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy
Authors: Foxon, CT Cheng, TS Novikov, SV Jeffs, NJ Hughes, OH Melnik, YV Nikolaev, AE Dmitriev, VA
Citation: Ct. Foxon et al., Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy, SURF SCI, 421(3), 1999, pp. 377-385
GaN/SiC quasi-substrates for GaN-based LEDs
Authors: Schwegler, V Kirchner, C Seyboth, M Kamp, M Ebeling, KJ Melnik, YV Nikolaev, AE Tsvetkov, D Dmitriev, VA
Citation: V. Schwegler et al., GaN/SiC quasi-substrates for GaN-based LEDs, PHYS ST S-A, 176(1), 1999, pp. 99-102
Dislocation reduction in AlN and GaN bulk crystals grown by HVPE
Authors: Albrecht, M Nikitina, IP Nikolaev, AE Melnik, YV Dmitriev, VA Strunk, HP
Citation: M. Albrecht et al., Dislocation reduction in AlN and GaN bulk crystals grown by HVPE, PHYS ST S-A, 176(1), 1999, pp. 453-458
Cathodoluminescence and transmission electron microscopy study of the influence of crystal defects on optical transitions in GaN
Authors: Salviati, G Albrecht, M Zanotti-Fregonara, C Armani, N Mayer, M Shreter, Y Guzzi, M Melnik, YV Vassilevski, K Dmitriev, VA Strunk, HP
Citation: G. Salviati et al., Cathodoluminescence and transmission electron microscopy study of the influence of crystal defects on optical transitions in GaN, PHYS ST S-A, 171(1), 1999, pp. 325-339
The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates
Authors: Cheng, TS Novikov, SV Lebedev, VB Campion, RP Jeffs, NJ Melnik, YV Tsvetkov, DV Stepanov, SI Cherenkov, AE Dmitriev, VA Korakakis, D Hughes, OH Foxon, CT
Citation: Ts. Cheng et al., The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates, J CRYST GR, 197(1-2), 1999, pp. 12-18
Insulating GaN : Zn layers grown by hydride vapor phase epitaxy on SiC substrates
Authors: Kuznetsov, NI Nikolaev, AE Zubrilov, AS Melnik, YV Dmitriev, VA
Citation: Ni. Kuznetsov et al., Insulating GaN : Zn layers grown by hydride vapor phase epitaxy on SiC substrates, APPL PHYS L, 75(20), 1999, pp. 3138-3140
Risultati: 1-8 |