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Results: 1-19 |
Results: 19
Correlation between hot-electron-stress-induced degradation and cathodoluminescence in InP-based HEMTs
Authors: Salviati, G Armani, N Cova, P Meneghesso, G Zanoni, E
Citation: G. Salviati et al., Correlation between hot-electron-stress-induced degradation and cathodoluminescence in InP-based HEMTs, MAT SCI E B, 80(1-3), 2001, pp. 289-293
Trap characterization in buried-gate n-channel 6H-SiC JFETs
Authors: Meneghesso, G Chini, A Verzellesi, G Cavallini, A Canali, C Zanoni, E
Citation: G. Meneghesso et al., Trap characterization in buried-gate n-channel 6H-SiC JFETs, IEEE ELEC D, 22(9), 2001, pp. 432-434
Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs
Authors: Buttari, D Chini, A Meneghesso, G Zanoni, E Sawdai, D Pavlidis, D Hsu, SSH
Citation: D. Buttari et al., Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs, IEEE ELEC D, 22(5), 2001, pp. 197-199
Experimental and Monte Carlo analysis of near-breakdown phenomena in GaAs-based heterostructure FETs
Authors: Sleiman, A Di Carlo, A Tocca, L Lugli, P Zandler, G Meneghesso, G Zanoni, E Canali, C Cetronio, A Lanzieri, M Peroni, M
Citation: A. Sleiman et al., Experimental and Monte Carlo analysis of near-breakdown phenomena in GaAs-based heterostructure FETs, SEMIC SCI T, 16(5), 2001, pp. 315-319
Long term stability of InGaAs/AlInAs/GaAs methamorphic HEMTs
Authors: Meneghesso, G Chini, A Zanoni, E
Citation: G. Meneghesso et al., Long term stability of InGaAs/AlInAs/GaAs methamorphic HEMTs, MICROEL REL, 41(9-10), 2001, pp. 1579-1584
Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs
Authors: Meneghesso, G Podda, S Vanzi, M
Citation: G. Meneghesso et al., Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs, MICROEL REL, 41(9-10), 2001, pp. 1609-1614
ESD protection structures for BCD5 smart power technologies
Authors: Sponton, L Cerati, L Croce, G Chrappan, F Contiero, C Meneghesso, G Zanoni, E
Citation: L. Sponton et al., ESD protection structures for BCD5 smart power technologies, MICROEL REL, 41(9-10), 2001, pp. 1683-1687
Monte Carlo study of the dynamic breakdown effects in HEMT's
Authors: Di Carlo, A Rossi, L Lugli, P Zandler, G Meneghesso, G Jackson, M Zanoni, E
Citation: A. Di Carlo et al., Monte Carlo study of the dynamic breakdown effects in HEMT's, IEEE ELEC D, 21(4), 2000, pp. 149-151
Parasitic effects and long term stability of InP-based HEMTs
Authors: Meneghesso, G Luise, R Buttari, D Chini, A Yokoyama, H Suemitsu, T Zanoni, E
Citation: G. Meneghesso et al., Parasitic effects and long term stability of InP-based HEMTs, MICROEL REL, 40(8-10), 2000, pp. 1715-1720
Overstress and electrostatic discharge in CMOS and BCD integrated circuits
Authors: Meneghesso, G Ciappa, M Malberti, P Sponton, L Croce, G Contiero, C Zanoni, E
Citation: G. Meneghesso et al., Overstress and electrostatic discharge in CMOS and BCD integrated circuits, MICROEL REL, 40(8-10), 2000, pp. 1739-1746
Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devices
Authors: Zanoni, E Meneghesso, G Menozzi, R
Citation: E. Zanoni et al., Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devices, J CRYST GR, 210(1-3), 2000, pp. 331-340
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT's bymeans of electroluminescence
Authors: Meneghesso, G Grave, T Manfredi, M Pavesi, M Canali, C Zanoni, E
Citation: G. Meneghesso et al., Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT's bymeans of electroluminescence, IEEE DEVICE, 47(1), 2000, pp. 2-10
Monte Carlo simulation of impact ionization and light emission in pseudomorphic HEMTs
Authors: Zandler, G Rossi, L DiCarlo, A Tocca, L Bonfiglio, A Brunori, M Lugli, P Meneghesso, G Zanoni, E
Citation: G. Zandler et al., Monte Carlo simulation of impact ionization and light emission in pseudomorphic HEMTs, PHYSICA B, 272(1-4), 1999, pp. 558-561
Electroluminescence analysis of HFET's breakdown
Authors: Gaddi, R Meneghesso, G Pavesi, M Peroni, M Canali, C Zanoni, E
Citation: R. Gaddi et al., Electroluminescence analysis of HFET's breakdown, IEEE ELEC D, 20(7), 1999, pp. 372-374
HBM and TLP ESD robustness in smart-power protection structures
Authors: Santirosi, S Meneghesso, G Novarini, E Contiero, C Zanoni, E
Citation: S. Santirosi et al., HBM and TLP ESD robustness in smart-power protection structures, MICROEL REL, 39(6-7), 1999, pp. 839-844
Cathodoluminescence from hot electron stressed InPHEMTs
Authors: Cova, P Meneghesso, G Salviati, G Zanoni, E
Citation: P. Cova et al., Cathodoluminescence from hot electron stressed InPHEMTs, MICROEL REL, 39(6-7), 1999, pp. 1073-1078
Test structures and testing methods for electrostatic discharge: results of PROPHECY project
Authors: Meneghesso, G Zanoni, E Gerosa, A Pavan, P Stadler, W Esmark, K Guggenmos, X
Citation: G. Meneghesso et al., Test structures and testing methods for electrostatic discharge: results of PROPHECY project, MICROEL REL, 39(5), 1999, pp. 635-646
DC and pulsed measurements of on-state breakdown voltage in GaAs MESFETs and InP-based HEMTs
Authors: Meneghesso, G Massari, G Buttari, D Bortoletto, A Maretto, M Zanoni, E
Citation: G. Meneghesso et al., DC and pulsed measurements of on-state breakdown voltage in GaAs MESFETs and InP-based HEMTs, MICROEL REL, 39(12), 1999, pp. 1759-1763
On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness
Authors: Meneghesso, G Neviani, A Oesterholt, R Matloubian, M Liu, TK Brown, JJ Canali, C Zanoni, E
Citation: G. Meneghesso et al., On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness, IEEE DEVICE, 46(1), 1999, pp. 2-9
Risultati: 1-19 |