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Results: 1-11 |
Results: 11
Synthesis and oxidation of dirhenium C-4, C-6, and C-8 complexes of the formula (eta(5)-C5Me5)Re(NO)(PR3)(C C)(n)(R3P)(ON)Re(eta(5)-C5Me5)(R=4-C6H4R', c-C6H11): In search of dications and radical cations with enhanced stabilities
Authors: Meyer, WE Amoroso, AJ Horn, CR Jaeger, M Gladysz, JA
Citation: We. Meyer et al., Synthesis and oxidation of dirhenium C-4, C-6, and C-8 complexes of the formula (eta(5)-C5Me5)Re(NO)(PR3)(C C)(n)(R3P)(ON)Re(eta(5)-C5Me5)(R=4-C6H4R', c-C6H11): In search of dications and radical cations with enhanced stabilities, ORGANOMETAL, 20(6), 2001, pp. 1115-1127
Configurationally metastable defects in irradiated epitaxially grown boron-doped p-type Si - art. no. 045201
Authors: Mamor, M Willander, M Auret, FD Meyer, WE Sveinbjornsson, E
Citation: M. Mamor et al., Configurationally metastable defects in irradiated epitaxially grown boron-doped p-type Si - art. no. 045201, PHYS REV B, 6304(4), 2001, pp. 5201
Metallisation induced electron traps in epitaxially grown n-type GaN
Authors: Auret, FD Goodman, SA Meyer, WE Koschnick, FK Spaeth, JM Beaumont, B Gibart, P
Citation: Fd. Auret et al., Metallisation induced electron traps in epitaxially grown n-type GaN, MAT SCI E B, 71, 2000, pp. 77-81
Synthesis and oxidation of chiral rhenium phosphine methyl complexes of the formula (eta(5)-C5Me5)Re(NO) (PR3)(CH3): in search of radical cations with enhanced kinetic stabilities
Authors: Meyer, WE Amoroso, AJ Jaeger, M Le Bras, J Wong, WT Gladysz, JA
Citation: We. Meyer et al., Synthesis and oxidation of chiral rhenium phosphine methyl complexes of the formula (eta(5)-C5Me5)Re(NO) (PR3)(CH3): in search of radical cations with enhanced kinetic stabilities, J ORGMET CH, 616(1-2), 2000, pp. 44-53
Synthesis, crystal structure, and reactions of the 17-valence-electron rhenium methyl complex [(eta(5)-C5Me5)Re(NO)(P(4-C6H4CH3)(3))(CH3)](center dot+) B(3,5-C6H3(CF3)(2))(4)(-): experimental and computational bonding comparisons with 18-electron methyl and methylidene complexes
Authors: Le Bras, J Jiao, HJ Meyer, WE Hampel, F Gladysz, JA
Citation: J. Le Bras et al., Synthesis, crystal structure, and reactions of the 17-valence-electron rhenium methyl complex [(eta(5)-C5Me5)Re(NO)(P(4-C6H4CH3)(3))(CH3)](center dot+) B(3,5-C6H3(CF3)(2))(4)(-): experimental and computational bonding comparisons with 18-electron methyl and methylidene complexes, J ORGMET CH, 616(1-2), 2000, pp. 54-66
A "conjugal" consanguineous family of butadiynediyl-derived complexes: Synthesis and electronic ground states of neutral, radical cationic, and dicationic iron/rhenium C-4 species
Authors: Paul, F Meyer, WE Toupet, L Jiao, HJ Gladysz, JA Lapinte, C
Citation: F. Paul et al., A "conjugal" consanguineous family of butadiynediyl-derived complexes: Synthesis and electronic ground states of neutral, radical cationic, and dicationic iron/rhenium C-4 species, J AM CHEM S, 122(39), 2000, pp. 9405-9414
Metastable-like behaviour of a sputter deposition-induced electron trap inn-GaN
Authors: Auret, FD Meyer, WE Goodman, SA Koschnick, FK Spaeth, JM Beaumont, B Gibart, P
Citation: Fd. Auret et al., Metastable-like behaviour of a sputter deposition-induced electron trap inn-GaN, PHYSICA B, 274, 1999, pp. 92-95
The influence of high-energy alpha-particle irradiation on the spectral and defect properties of a Si photovoltaic detector
Authors: Goodman, SA Auret, FD du Plessis, M Meyer, WE
Citation: Sa. Goodman et al., The influence of high-energy alpha-particle irradiation on the spectral and defect properties of a Si photovoltaic detector, SEMIC SCI T, 14(4), 1999, pp. 323-326
Electric-field-enhanced emission and annealing behaviour of electron trapsintroduced in n-Si by low-energy He ion bombardment
Authors: Deenapanray, PNK Meyer, WE Auret, FD
Citation: Pnk. Deenapanray et al., Electric-field-enhanced emission and annealing behaviour of electron trapsintroduced in n-Si by low-energy He ion bombardment, SEMIC SCI T, 14(1), 1999, pp. 41-47
Emission kinetics of electron traps introduced in n-GaN during He-ion irradiation
Authors: Auret, FD Goodman, SA Legodi, MJ Meyer, WE
Citation: Fd. Auret et al., Emission kinetics of electron traps introduced in n-GaN during He-ion irradiation, NUCL INST B, 148(1-4), 1999, pp. 474-477
Fermi level pinning by metal Schottky contacts on n type GaAs
Authors: Myburg, G Meyer, WE Auret, FD Burger, H Barnard, WO Goodman, SA
Citation: G. Myburg et al., Fermi level pinning by metal Schottky contacts on n type GaAs, MATER SCI T, 14(12), 1998, pp. 1269-1272
Risultati: 1-11 |