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Results: 1-25 | 26-27
Results: 1-25/27
Nanometer-scale voids in PECVD silicon-oxide films probed by variable-energy positron lifetime spectroscopy: A comparison with infrared spectroscopy
Authors: Wang, CL Kobayashi, Y Hirata, K Suzuki, R Ohdaira, T Mikado, T
Citation: Cl. Wang et al., Nanometer-scale voids in PECVD silicon-oxide films probed by variable-energy positron lifetime spectroscopy: A comparison with infrared spectroscopy, RADIAT PH C, 60(4-5), 2001, pp. 545-549
Identification of open-volume defects in disordered and amorphized Si: A depth-resolved positron annihilation study - art. no. 224112
Authors: Amarendra, G Rajaraman, R Rao, GV Nair, KGM Viswanathan, B Suzuki, R Ohdaira, T Mikado, T
Citation: G. Amarendra et al., Identification of open-volume defects in disordered and amorphized Si: A depth-resolved positron annihilation study - art. no. 224112, PHYS REV B, 6322(22), 2001, pp. 4112
Characterization of low temperature grown Si layer for SiGe pseudo-substrates by positron annihilation spectroscopy
Authors: Ueno, T Irisawa, T Shiraki, Y Uedono, A Tanigawa, S Suzuki, R Ohdaira, T Mikado, T
Citation: T. Ueno et al., Characterization of low temperature grown Si layer for SiGe pseudo-substrates by positron annihilation spectroscopy, J CRYST GR, 227, 2001, pp. 761-765
Variable-energy positron lifetime study of silicon-oxide films plasma deposited from hexamethyldisiloxane and oxygen mixtures
Authors: Wang, CL Kobayashi, Y Togashi, H Hirata, K Suzuki, R Ohdaira, T Mikado, T Hishita, S
Citation: Cl. Wang et al., Variable-energy positron lifetime study of silicon-oxide films plasma deposited from hexamethyldisiloxane and oxygen mixtures, J APPL POLY, 79(6), 2001, pp. 974-980
Nanoporous structure of methyl-silsesquioxane films using monoenergetic positron beams
Authors: Uedono, A Chen, ZQ Suzuki, R Ohdaira, T Mikado, T Fukui, S Shiota, A Kimura, S
Citation: A. Uedono et al., Nanoporous structure of methyl-silsesquioxane films using monoenergetic positron beams, J APPL PHYS, 90(5), 2001, pp. 2498-2503
Oxygen-related defects in low-dose separation-by-implanted oxygen wafers probed by monoenergetic positron beams
Authors: Uedono, A Chen, ZQ Ogura, A Ono, H Suzuki, R Ohdaira, T Mikado, T
Citation: A. Uedono et al., Oxygen-related defects in low-dose separation-by-implanted oxygen wafers probed by monoenergetic positron beams, J APPL PHYS, 90(12), 2001, pp. 6026-6031
Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams
Authors: Uedono, A Chichibu, SF Chen, ZQ Sumiya, M Suzuki, R Ohdaira, T Mikado, T Mukai, T Nakamura, S
Citation: A. Uedono et al., Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams, J APPL PHYS, 90(1), 2001, pp. 181-186
A study of vacancy-type defects introduced by the carburization of Si by monoenergetic positron beams
Authors: Uedono, A Muramatsu, M Ubukata, T Watanabe, M Ichihashi, T Suzuki, R Ohdaira, T Mikado, T Takasu, S
Citation: A. Uedono et al., A study of vacancy-type defects introduced by the carburization of Si by monoenergetic positron beams, J APPL PHYS, 89(7), 2001, pp. 3606-3610
Oxygen-related defects introduced by As+-implantation through cap layers in Si probed by monoenergetic positron beams
Authors: Uedono, A Muramatsu, M Ubukata, T Tanino, H Tanigawa, S Nakano, A Yamamoto, H Suzuki, R Ohdaira, T Mikado, T
Citation: A. Uedono et al., Oxygen-related defects introduced by As+-implantation through cap layers in Si probed by monoenergetic positron beams, JPN J A P 1, 39(11), 2000, pp. 6126-6129
A positron lifetime spectroscopy apparatus for surface and near-surface positronium experiments
Authors: Suzuki, R Ohdaira, T Mikado, T
Citation: R. Suzuki et al., A positron lifetime spectroscopy apparatus for surface and near-surface positronium experiments, RADIAT PH C, 58(5-6), 2000, pp. 603-606
Characterization of porous SiC by variable-energy positron beams
Authors: Hirata, K Monguchi, T Suzuki, R Ohdaira, T Kobayashi, Y Kumagai, T Tsunoda, T Hishita, S Mikado, T Fujioka, H Oshima, M
Citation: K. Hirata et al., Characterization of porous SiC by variable-energy positron beams, RADIAT PH C, 58(5-6), 2000, pp. 621-624
Open spaces and relaxation processes in the subsurface region of polypropylene probed by monoenergetic positron beams
Authors: Uedono, A Suzuki, R Ohdaira, T Mikado, T Tanigawa, S Ban, M Kyoto, M Uozumi, T
Citation: A. Uedono et al., Open spaces and relaxation processes in the subsurface region of polypropylene probed by monoenergetic positron beams, J POL SC PP, 38(1), 2000, pp. 101-107
Lasing towards the VUV in the NIJI-IV FEL
Authors: Yamada, K Sei, N Ohgaki, H Mikado, T Sugiyama, S Yamazaki, T
Citation: K. Yamada et al., Lasing towards the VUV in the NIJI-IV FEL, NUCL INST A, 445(1-3), 2000, pp. 173-177
Improvement of the RF system in the storage ring NIJI-IV for VUV free electron lasers
Authors: Sei, N Yamada, K Mikado, T Ohgaki, H Sugiyama, S Yamazaki, T
Citation: N. Sei et al., Improvement of the RF system in the storage ring NIJI-IV for VUV free electron lasers, NUCL INST A, 445(1-3), 2000, pp. 437-441
Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams
Authors: Uedono, A Tanigawa, S Ohshima, T Itoh, H Yoshikawa, M Nashiyama, I Frank, T Pensl, G Suzuki, R Ohdaira, T Mikado, T
Citation: A. Uedono et al., Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams, J APPL PHYS, 87(9), 2000, pp. 4119-4125
Annealing properties of defects during Si-on-insulator fabrication by low-dose oxygen implantation studied by monoenergetic positron beams
Authors: Uedono, A Tanigawa, S Ogura, A Ono, H Suzuki, R Ohdaira, T Mikado, T
Citation: A. Uedono et al., Annealing properties of defects during Si-on-insulator fabrication by low-dose oxygen implantation studied by monoenergetic positron beams, J APPL PHYS, 87(4), 2000, pp. 1659-1665
Observation of M1 resonance in Pb-206 using a highly linear polarized photon beam
Authors: Ohgaki, H Toyokawa, H Noguchi, T Sugiyama, S Mikado, T Yamada, K Suzuki, R Ohdaira, T Sei, N Yamazaki, T
Citation: H. Ohgaki et al., Observation of M1 resonance in Pb-206 using a highly linear polarized photon beam, NUCL PHYS A, 649, 1999, pp. 73C-76C
Positron re-emission from tungsten surfaces
Authors: Suzuki, R Amarendra, G Ohdaira, T Mikado, T
Citation: R. Suzuki et al., Positron re-emission from tungsten surfaces, APPL SURF S, 149(1-4), 1999, pp. 66-70
Characterization of H-related defects in H-implanted Si with slow positrons
Authors: Fujinami, M Suzuki, R Ohdaira, T Mikado, T
Citation: M. Fujinami et al., Characterization of H-related defects in H-implanted Si with slow positrons, APPL SURF S, 149(1-4), 1999, pp. 188-192
Time-of-flight positron-annihilation induced Auger electron spectroscopy studies of adsorption of oxygen on Si(100)
Authors: Ohdaira, T Suzuki, R Mikado, T
Citation: T. Ohdaira et al., Time-of-flight positron-annihilation induced Auger electron spectroscopy studies of adsorption of oxygen on Si(100), APPL SURF S, 149(1-4), 1999, pp. 260-263
Lasing down to the deep UV in the NIJI-IV FEL
Authors: Yamada, K Sei, N Yamazaki, T Ohgaki, H Litvinenko, VN Mikado, T Sugiyama, S Kawai, M Yokoyama, M
Citation: K. Yamada et al., Lasing down to the deep UV in the NIJI-IV FEL, NUCL INST A, 429(1-3), 1999, pp. 159-164
Improvement of the beam duality by chromaticity correction for wavelength shortening in the NIJI-IV FEL
Authors: Sei, N Yamada, K Ohgaki, H Litvinenko, VN Mikado, T Yamazaki, T
Citation: N. Sei et al., Improvement of the beam duality by chromaticity correction for wavelength shortening in the NIJI-IV FEL, NUCL INST A, 429(1-3), 1999, pp. 185-190
Development of a photoneutron detection system at ETL Laser-Compton-backscattered photon facility
Authors: Toyokawa, H Ohgaki, H Sugiyama, S Mikado, T Yamada, K Sei, N Suzuki, R Ohdaira, T Yamazaki, T
Citation: H. Toyokawa et al., Development of a photoneutron detection system at ETL Laser-Compton-backscattered photon facility, NUCL INST A, 422(1-3), 1999, pp. 95-100
Surface top-layer analysis by positron annihilation induced Auger electronspectroscopy
Authors: Ohdaira, T Suzuki, R Mikado, T
Citation: T. Ohdaira et al., Surface top-layer analysis by positron annihilation induced Auger electronspectroscopy, SURF SCI, 435, 1999, pp. 239-243
Plasma-polymerized hexamethyldisiloxane films characterized by variable-energy positron lifetime spectroscopy
Authors: Wang, CL Kobayashi, Y Togashi, H Kato, K Hirotsu, T Hirata, K Suzuki, R Ohdaira, T Mikado, T
Citation: Cl. Wang et al., Plasma-polymerized hexamethyldisiloxane films characterized by variable-energy positron lifetime spectroscopy, J APPL POLY, 74(10), 1999, pp. 2522-2528
Risultati: 1-25 | 26-27